| PART |
Description |
Maker |
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
| RFHA1000 |
15W GaN WIDE-BAND POWER AMPLIFIER
|
RF Micro Devices
|
| RFHA1027 |
500W GaN Wide-Band Pulsed Power Amplifier
|
RF Micro Devices
|
| MAPG-S22729-350L00 MAPG-002729-350L00 |
S-Band 350 W Radar Pulsed Power GaN Pallet
|
M/A-COM Technology Solu...
|
| ECJ-2VB1H104K ECJ-2VB1H103K ERJ-8GEY0R00 ERJ-8GEYJ |
280W GaN WIDE-BAND PULSED POWER AMPLIFIER
|
RF Micro Devices
|
| CGHV14500 CGHV14500F CGHV14500F-AMP CGHV14500F-TB |
500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems
|
Cree, Inc
|
| NE55410GR-T3-AZ |
2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
Renesas Electronics Corporation
|
| CM421655 CM421255 |
SCR/Diode POW-R-BLOK?Modules 55 Amperes/1200-1600 Volts
SCR/Diode POW-R-BLOK⑩ Modules 55 Amperes/1200-1600 Volts
SCR/Diode POW-R-BLOKModules 55 Amperes/1200-1600 Volts
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
|
| FLM1011-6F |
KU BAND, GaAs, N-CHANNEL, RF POWER, JFET
X, Ku-Band Internally Matched FET
|
Eudyna Devices Inc
|
| CD410860 |
Dual Diode POW-R-BLOK?Modules 60 Amperes/800 Volts
Dual Diode POW-R-BLOK Modules 60 Amperes/800 Volts
Dual Diode POW-R-BLOK⑩ Modules 60 Amperes/800 Volts
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
|
