| PART |
Description |
Maker |
| 2SC5488A |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
VHF to UHF Wide-Band Low-Noise Amplifier Applications
|
Sanyo Semicon Device
|
| UTV005P |
UHF TV 470-860 MHz, Class A, Common Emitter; fO (MHz): 860; P(out) (W): 0.5; Gain (dB): 10; Vcc (V): 20; ICQ (A): 0.22; IMD Type (dB): -60; Case Style: 55FU-2 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
0.5 Watts, 20 Volts, Class A UHF Television - Band IV & V
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| JDH2S01T |
UHF Band Mixer
Diode Silicon Epitaxial Schottky Barrier Type UHF Band Mixer
|
Toshiba Corporation
|
| KDV154 KDV154A KDV154B |
TV VHF, UHF tuner AFC VCO for UHF band radio
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(TV VHF,UHF TUNER AFC VCO FOR UHF BAND RADIO)
|
Korea Electronics (KEC)
KEC(Korea Electronics)
|
| SST5912T1 |
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET
|
CALOGIC LLC
|
| UTV120 |
UHF TV 470-860 MHz, Class A, Common Emitter; fO (MHz): 860; P(out) (W): 12; Gain (dB): 8.9; Vcc (V): 26.5; ICQ (A): 1.7; IMD Type (dB): -52; Case Style: 55JT-2 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
| KV2101 KV2001 KV2501-15 KV2501-00 KV2801 KV2801-30 |
VARACTOR DIODES HF/VHF/UHF Hyperabrupt Junction
UHF BAND, 50 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
UHF BAND, 200 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
UHF BAND, 155 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation
MICROSEMI CORP-LOWELL
|
| PD54003L-E |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
STMICROELECTRONICS
|
| PD57006-E |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
STMICROELECTRONICS
|
| PN4416-TO-72 |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-72
|
MICROSS COMPONENTS
|
| 3SK290ZJ-TR |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET CMPAK-4
|
SMSC, Corp.
|
|
