| PART |
Description |
Maker |
| DS1330YP-70IND DS1330ABP-70IND DS1330ABP-100 |
256k Nonvolatile SRAM with Battery Monitor 32K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34
256k Nonvolatile SRAM with Battery Monitor 32K X 8 NON-VOLATILE SRAM MODULE, 100 ns, DMA34
|
Maxim Integrated Products, Inc.
MAXIM INTEGRATED PRODUCTS INC
|
| CY7C199CN-20ZXIT CY7C199CNL-15VC CY7C199CN-20ZI CY |
256K (32K x 8) Static RAM; Density: 256 Kb; Organization: 32Kb x 8; Vcc (V): 4.5 to 5.5 V; 32K X 8 STANDARD SRAM, 20 ns, PDSO28
256K (32K x 8) Static RAM 32K X 8 STANDARD SRAM, 15 ns, PDSO28
256K (32K x 8) Static RAM 32K X 8 STANDARD SRAM, 20 ns, PDSO28
256K (32K x 8) Static RAM 32K X 8 STANDARD SRAM, 25 ns, PDIP28
|
Cypress Semiconductor, Corp.
|
| DS1330YP-70 DS1330ABP-70-IND |
256k Nonvolatile SRAM with Battery Monitor 32K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34
32K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34 POWERCAP MODULE-34
|
Maxim Integrated Products, Inc.
DALLAS SEMICONDUCTOR
|
| DS1230 DS1230W DS1230WP-150-IND 1230W DS1230W-100 |
3.3V 256k Nonvolatile SRAM
3.3V 256K Nonovolatile SRAM
From old datasheet system
|
MAXIM - Dallas Semiconductor
DALLAS[Dallas Semiconducotr]
|
| DS2030Y-100 DS2030AB-70 DS2030Y-70 DS2030AB-100 |
100 ns, 4.5 V to 5.5 V, rechargeable 256k nonvolatile SRAM
70 ns, 4.75 V to 5.25 V, rechargeable 256k nonvolatile SRAM
70 ns, 4.5 V to 5.5 V, rechargeable 256k nonvolatile SRAM
100 ns, 4.75 V to 5.25 V, rechargeable 256k nonvolatile SRAM
|
MAXIM - Dallas Semiconductor
|
| LH52256C-10LL LH525CL9 |
256K SRAM
CMOS 256K (32K x8) Static RAM(CMOS 256K (32K x8) 静态RAM) 的CMOS 256K2K的8）静态RAM（的CMOS 256K2K的8）静态的RAM
|
Sharp Electrionic Compo...
Sharp Electrionic Components
Sharp, Corp.
|
| CY7C1399BN-12VC CY7C1399BNL-15VXC CY7C1399BNL-12ZX |
256K (32K x 8) Static RAM 32K X 8 STANDARD SRAM, 12 ns, PDSO28
256K (32K x 8) Static RAM 32K X 8 STANDARD SRAM, 15 ns, PDSO28
|
Cypress Semiconductor Corp.
SRAM
Cypress Semiconductor, Corp.
|
| IDT71256 IDT71256L IDT71256L100D IDT71256L100DB ID |
Precision Adjustable (Programmable) Shunt Reference 8-CDIP -55 to 125 的CMOS静态RAM 256K2K的8位）
Dual Pulse-Width-Modulation Control Circuit 16-SSOP 的CMOS静态RAM 256K2K的8位）
CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 25 ns, CDIP28
Single UART with 16-Byte FIFOs and Auto Flow Control 44-PLCC 0 to 70 的CMOS静态RAM 256K2K的8位）
CABLE SMA/SMA 36 RG-142 的CMOS静态RAM 256K2K的8位）
CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 120 ns, CDIP28
Dual-Channel Pulse-Width-Modulation (PWM) Control Circuit 16-SSOP -20 to 85 的CMOS静态RAM 256K2K的8位）
CMOS STATIC RAM 256K (32K x 8-BIT) 的CMOS静态RAM 256K2K的8位）
CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 30 ns, PDSO28
CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 30 ns, PDIP28
Replaced by TL16C550C : Single UART with 16-Byte FIFO 40-PDIP 0 to 70
Single UART with 16-Byte FIFOs and Auto Flow Control 48-LQFP 0 to 70
1.8-V to 5-V Dual UART with 16-Byte FIFOs 48-TQFP 0 to 70
Replaced by TL16C550C : Single UART with 16-Byte FIFO 44-PLCC 0 to 70
Replaced by TL16C550C : Single UART with 16-Byte FIFOs 44-PLCC 0 to 70
Replaced by TL16C550C : Single UART with 16-Byte FIFOs 44-PLCC -40 to 85
Quad Pulse-Width-Modulation Control Circuit 48-LQFP -20 to 75
CMOS Static RAM 256k ( 32k X 8-bit )
|
INTEGRATED DEVICE TECHNOLOGY INC
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
Integrated Device Technolog...
|
| DS2030Y DS2030AB |
Single-Piece 256k Nonvolatile SRAM
|
Maxim
|
| GS70328TS-8IT GS7032 GS70328SJ GS70328SJ-10 GS7032 |
256K Async SRAMs
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 100uF; Voltage: 25V; Case Size: 8x11.5 mm; Packaging: Bulk
32K x 8 256Kb Asynchronous SRAM 32K的8 256Kb的异步SRAM
32K x 8 256Kb Asynchronous SRAM
|
GSI[GSI Technology]
Electronic Theatre Controls, Inc.
|
