| PART |
Description |
Maker |
| K4S64323LF-DG_S15 K4S64323LF-DG_S1H K4S64323LF-DG_ |
2M X 32 SYNCHRONOUS DRAM, 9 ns, PBGA90
2Mx32 Mobile SDRAM 90FBGA 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-SOIC -55 to 125
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 8-CDIP -55 to 125
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 20-LCCC -55 to 125
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-PDIP -55 to 125
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| HA-5137A |
Op Amp, 63MHz, Precision, Ultra-Low Noise, Minimum Gain of 5
63MHz/ Ultra-Low Noise Precision Operational Amplifier
|
Intersil Corporation
|
| MAX44244 |
36V, Precision, Low-Power, 90碌A, Single/Quad/Dual Op Amps
|
Maxim Integrated Products, Inc.
|
| ISL70419SEHX ISL70419SEHEV1Z |
Radiation Hardened 36V Quad Precision Low Power Operational Amplifier
|
Intersil
|
| OP1177 OP1177AR OP1177ARM OP4177 OP4177AR OP4177AR |
Precision, Single, Low Noise Low Input Bias Current Operational Amplifiers
Precision Low Noise, Low Input Bias Current Operational Amplifiers
Precision Low Noise Low Input Bias Current Operational Amplifiers
From old datasheet system
|
AD[Analog Devices]
|
| K4S643232C-TC/L80 K4S643232C-TC/L10 K4S643232C-TC/ |
ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External Components- Fully Encapsulated- Efficiency to 70%
Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 14-SOIC 200万32内存12k × 32 × 4银行同步DRAM LVTTL
Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 8-CDIP -55 to 125 200万32内存12k × 32 × 4银行同步DRAM LVTTL
ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External Components- Fully Encapsulated- Efficiency to 70%
Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-PDIP -40 to 85
Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC -40 to 85
Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 14-SOIC
Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 20-LCCC -55 to 125
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HA7-5127-2 HA7-5127-5 HA7-5127A-5 HA9P5127-5 HA-51 |
From old datasheet system
8.5MHz, Ultra-Low Noise Precision Operational Amplifier Features
8.5MHz Ultra-Low Noise Precision Operational Amplifier
8.5MHz/ Ultra-Low Noise Precision Operational Amplifier
|
INTERSIL[Intersil Corporation]
|
| OP37 OP37EP OP37AZ OP37GPZ OP37GS OP37GP |
Low Noise, Precision, High Speed tional Amplifier
Low Noise, Precision, High Speed Operational Amplifier (A(VCL) >- 5)
|
Analog Devices
|
| ADR390AUJZ-R2 ADR390AUJZ-REEL7 ADR392AUJZ-R2 ADR39 |
2.048 V Micropower, Low Noise Precision Voltage References with Shutdown
4.096 V Micropower, Low Noise Precision Voltage References with Shutdown
2.5V Micropower, Low Noise Precision Voltage References with Shutdown
5.0 V Micropower, Low Noise Precision Voltage References with Shutdown
|
Analog Devices
|
| LTM8031 LTM8031EVPBF LTM8031IVPBF |
Ultralow Noise EMC 36V, 1A DC/DC 渭Module Regulator
Ultralow Noise EMC 36V, 1A DC/DC μModule Regulator
|
Linear Technology
|
| LTM8032 LTM8032EVPBF LTM8032IVPBF LTM8032MPVPBF |
Ultralow Noise EMC Compliant 36V, 2A DC/DC 楼矛Module
Ultralow Noise EMC Compliant 36V, 2A DC/DC μModule
|
Linear Technology
|
| AD8674ARUZ AD8674ARZ AD8674AR-REEL AD8674AR-REEL7 |
Dual Precision Very Low Noise Low Input Bias Current Operational Amplifier
Quad Precision Very Low Noise Low Input Bias Current Operational Amplifier
|
Analog Devices
|
