PART |
Description |
Maker |
K7Q163682A K7Q161882 K7Q161882A |
512Kx36 & 1Mx18 QDR b2 SRAM 512Kx36 512Kx36 & 1Mx18 QDR b2 SRAM
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K7S1618T4C |
512Kx36 & 1Mx18 QDR II b4 SRAM
|
Samsung semiconductor
|
K7S1636U4C |
512Kx36 & 1Mx18 QDR II b4 SRAM
|
Samsung semiconductor
|
K7Q163652A K7Q161852A |
512Kx36 & 1Mx18 QDRTM b2 SRAM Electrical Outlet Connector; Voltage Rating:125V; Contact Plating:Nickel; Current Rating:30A RoHS Compliant: Yes 512Kx36
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K7N163631B-QC16 K7N163631B-QFCI25 K7M161835B-QC65 |
512Kx36 & 1Mx18 Pipelined NtRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K7K1636T2C K7K1618T2C |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
K7I163684B K7I161884B |
512Kx36 & 1Mx18 DDRII CIO b4 SRAM
|
Samsung semiconductor
|
K7N161801M K7N163601M |
512Kx36 & 1Mx18-Bit Pipelined NtRAM TM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K7Q161852A |
(K7Q161852A / K7Q163652A) 512Kx36 & 1Mx18 QDRTM b2 SRAM
|
Samsung semiconductor
|
K7J161882B |
(K7J161882B / K7J163682B) 512Kx36 & 1Mx18 DDR II SIO b2 SRAM
|
Samsung semiconductor
|
K7N163601MK7N161801M K7N161801M-TC160 |
1M X 18 ZBT SRAM, 3.5 ns, PQFP100 512Kx36 & 1Mx18 Pipelined NtRAMData Sheet
|
Samsung Electronic
|