| PART |
Description |
Maker |
| CMPD7006S CMPD7006 CMPD7006A CMPD7006C |
SMD Switching Diode Dual: Common Anode
SMD Switching Diode Dual: In Series
SMD Switching Diode Single: High Voltage
SMD Switching Diode Dual: Common Cathode
SURFACE MOUNT VERY HIGH VOLTAGE SILICO SWITCHING DIODE
|
CENTRAL[Central Semiconductor Corp]
|
| BAS21M3T5G |
SOT-723 SS Switching Diode SIGNAL DIODE
High Voltage Switching Diode
|
ON Semiconductor
|
| KDS135 |
Switching Diode
SILICON EPITAXIAL PLANAR DIODE (HIGH VOLTAGE SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| BYW52-TR BYW54-TR BYW54-TAP |
DIODE 2 A, 200 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier Diode
AVALANCHE DIODE SOD57 STD-E2
Diode Switching 600V 2A 2-Pin SOD-57 Ammo
|
Vishay Semiconductors
|
| M1MA142WKT1 M1MA141WK M1MA141WKT1 ON0326 M1MA141WK |
From old datasheet system
SC-70/SOT-323 PACKAGE COMMON CATHODE DUAL SWITCHING DIODE 40/80 V-100 mA SURFACE MOUNT
COMMON CATHODE DUAL SWITCHING DIODE 0.1 A, 80 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
Motorola Inc
|
| BAW56S Q62702-A1253 SIEMENSAG-Q62702-A1253 |
Silicon Switching Diode Array (For high-speed switching applications Common anode) 4 ELEMENT, SILICON, SIGNAL DIODE
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| 1N6642 1N4305 1N4149 1N4449 1N4444 1N4447 1N6638 1 |
COMPUTER DIODE Switching
COMPUTER SWITCHING DIODE
200mA Low Power Switching
|
MICROSEMI CORP-LOWELL
MICROSEMI[Microsemi Corporation]
|
| CPD91V |
Switching Diode Low Leakage Switching Diode Chip
|
Central Semiconductor Corp
|
| DCA01006 DCA010-TB-E |
Very High-Speed Switching Diode
Silicon Epitaxial Planar Type (Anode Common) Very High-Speed Switching Diode
|
Sanyo Semicon Device
|
| CMDD7006 |
SMD Switching Diode Single: High Voltage
SURFACE MOUNT VERY HIGH VOLTAGE SILICON SWITCHING DIODE
|
CENTRAL[Central Semiconductor Corp]
|
| MMBD7000 MMBD7000-TP |
225mW 100Volt Dual Switching Diode
DIODE SW DUAL 100V 150MA SOT23 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE
|
Micro Commercial Components, Corp.
|
| 1N4150-1 JANTXV1N4150-1 |
Signal or Computer Diode; Package: DO-35; IO (A): 0.2; Cj (pF): 2.5; Vrwm (V): 50; trr (nsec): 4; VF (V): 0.74; IR (µA): 0.1; 0.2 A, 50 V, SILICON, SIGNAL DIODE, DO-35
SWITCHING DIODE
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
