| PART |
Description |
Maker |
| FM-1000-50 FN-1-50 FN-1-100 FN-10-100 FN-100-100 F |
DC AMMETER SHUNTS DERIVADORES DE CORRIENTE (SHUNTS)
|
List of Unclassifed Manufacturers
List of Unclassifed Man...
|
| D..CRCW....LR |
Thick Film, Rectangular, Low Value Resistors, Special metal glaze on high quality ceramic, Protective overglaze, SnPb contacts on Ni barrier layer, Suitable for current sensors and shunts
|
Vishay
|
| RSA-80 RSB-170 RSB-250 RSC-1200 RSA-100 RSA-100-10 |
Precision Current / DC Current Shunts
Precision Current / DC Current Shunts
|
Riedon Powertron
|
| SPUMOLDED |
Molded Style, Current Shunts, Four Terminal Resistors for Specialized Applications, Low Value
|
Vishay
|
| SHM50500CQ SHM50500CW SHM50500Q SHM50500W |
DC Meter Shunts 50A to 15000A
|
RCD COMPONENTS INC.
|
| LA-30-100 LA-30-50 TYPE-LA LA-50-100 LA-10-100 LA- |
TYPE LA 5 through 150 Amperes
DC Ammeter Shunts
|
List of Unclassifed Man...
|
| BC517 Q62702-C825 |
NPN Silicon Darlington Transistor (High current gain High collector current)
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| SR104-T SR104-B |
HIGH CURRENT SCHOTTKY BARRIER RECTIFIER
High Current Capability and Low Forward Drop
|
Diodes Incorporated
|
| BDP951 BDP955 BDP953 Q62702-D1343 Q62702-D1339 Q62 |
NPN Silicon AF Power Transistors (For AF drivers and output stages High collector current High current gain) NPN硅自动对焦功率晶体管输出级驱动器和高集电极电流高电流增益（为自动
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 2SC5069 |
High current capacity. Adoption of MBIT process. High DC current gain.
|
TY Semiconductor Co., Ltd
|
| BC847PN Q62702-C2374 BC847PNQ62702C2374 Q62702-C15 |
PNP Silicon AF Transistors (For general AF applications High collector current High current gain)
TRANSISTOR SOT363
NPN/PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| S2370 |
V(dsx): 60V; V(dgr): 60V; V(gss): -20V; 40A; 125W; field effect transistor. For high speed high current switching applications, chopper regular, DC-DC converter and motor drive applications
HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
|
TOSHIBA[Toshiba Semiconductor]
|
