| PART |
Description |
Maker |
| BFY5002 BFY50.MODE4 |
MEDIUM POWER AMPLIFIERS NPN SILICON PLANAR TRANSISTOR
1000 mA, 35 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
|
Seme LAB
SEMELAB LTD
|
| ZTX652 ZTX653 |
NPN SILICON PLANAR MEDIUM POWER TRANSISTORS
NPN Medium Power Transistor
|
Zetex Semiconductors
|
| 2N2645 |
(2N2xxx) NPN General Purpose Medium Speed Amplifiers
|
Semicoa
|
| BFX84 BFX69 BFX96 BFX95 BFX97 BFX30 BFX39 BFX35 |
(BFXxx) Medium Power Amplifiers
|
Micro Electronics
|
| BFY56 BFY52 BFY41 |
(BFYxx) Medium Power Amplifiers and Switches
|
Micro Electronics
|
| FXT458 |
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR
From old datasheet system
|
ZETEX[Zetex Semiconductors]
|
| FMMTA06 |
NPN Med Power Transistor
NPN SILICON PLANAR MEDIUM POWER TRANSISTORS
|
ZETEX[Zetex Semiconductors]
|
| SG2824J_DESC SG28XXL_883B JAN2801J JAN2802J JAN280 |
HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS
Driver - Medium Current Array; Package: LCC; 0.6 A, 50 V, 8 CHANNEL, NPN, Si, POWER TRANSISTOR
Driver - Medium Current Array; Package: DIP; 0.6 A, 50 V, 8 CHANNEL, NPN, Si, POWER TRANSISTOR
Driver - Medium Current Array; Package: DIP; 0.5 A, 95 V, 8 CHANNEL, NPN, Si, POWER TRANSISTOR
Driver - Medium Current Array; Package: LCC; 0.5 A, 50 V, 8 CHANNEL, NPN, Si, POWER TRANSISTOR
|
Microsemi, Corp.
http://
Microsemi Corporation
|
| 2SC5347 |
High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifiers Applications 高频半功率输出级，低噪声输出放大器中的应
High-Frequency Semi-Power Output Stage/ Low-Noise Medium Output Amplifiers Applications
|
Sanyo Electric Co., Ltd.
Sanyo Semicon Device
|
| C2688BPL CSC2688 CSC2688BPL CSC2688G CSC2688O CSC2 |
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 200.000A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 160 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 60 - 120 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 80 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 100 - 200 hFE.
|
Continental Device India Limited
|
| BFR106 Q62702-F1219 |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers For linear broadband amplifiers) UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236
NPN Silicon RF Transistor (For low noise/ high-gain amplifiers For linear broadband amplifiers)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
