| PART |
Description |
Maker |
| LNA2901L |
GaAs Infrared Light Emitting Diode 5 mm, 1 ELEMENT, INFRARED LED, 950 nm
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| TSUS3400 |
Infrared Emitting Diode, 950 nm, GaAs
|
Vishay Siliconix
|
| TSKS5400-FSZ TSKS540008 TSKS5400 |
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
|
Vishay Siliconix
|
| CQY37N08 CQY37N |
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
|
Vishay Siliconix
|
| TSAL5300-GSZ TSAL5300 TSAL5300-FSZ |
High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
|
VISAY[Vishay Siliconix]
|
| MIE-554H4 554H4 |
GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE 发动器的T 1 3 / 4包装红外发光二极
Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd.
UOT[Unity Opto Technology]
|
| MIE-304H4 304H4 |
Infrared Emitting Diodes (IRED)
GaAlAs T-1 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| MIE-556L3U MIE-546L3U 556L3U |
Infrared Emitting Diodes (UL Listed)
GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| LNA2603F 0847 LN155 LNA2603FLN155 |
Opto-Electronic Device - Light Emitting Diodes - Infared Light Emitting Diodes
Infrared Light Emitting Diodes
From old datasheet system
GaAs Infrared Light Emitting Diode
|
Panasonic Corporation
Matsshita / Panasonic
PANASONIC[Panasonic Semiconductor]
|
| OP233 OP232 OP231 |
GaAs HERMETIC INFRARED EMITTING DIODES
GaALAs Hermetic Infrared Emitting Diode(铝砷化镓密封红外发光二极工作温度范围-65 125
|
OPTEK Technologies
Optek Technology
|
| TSUS4400 |
GaAs Infrared Emitting Diode in ?3 mm (T-1) Package
GaAs Infrared Emitting Diode in 庐3 mm (T-1) Package
GaAs Infrared Emitting Diode in ?3 mm (T-1) Package
From old datasheet system
|
VISAY[Vishay Siliconix]
|
| TSUS4300 |
GaAs Infrared Emitting Diode in ?3 mm (T-1) Package
GaAs Infrared Emitting Diode in 庐3 mm (T-1) Package
GaAs Infrared Emitting Diode in ?3 mm (T-1) Package
From old datasheet system
|
VISAY[Vishay Siliconix]
|
