| PART |
Description |
Maker |
| TPC8303 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSII)
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| TPC8402 |
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (MOSVI/U−MOSII)
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (MOSVI/U-MOSII)
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (MOSVI/U−MOSII)
TOSHIBA Field Effect Transistor Silicon N/ P Channel MOS Type (MOSVI/U−MOSII)
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| 2SK3759 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS?
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSサ)
|
Toshiba Semiconductor
|
| TPCP8301 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS?
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSコ)
|
Toshiba Semiconductor
|
| TPC8202 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE−MOSVI)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK1717 |
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
|
Toshiba Semiconductor
Sanken electric
|
| 2SJ440 |
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| SSM3K324R |
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
|
Toshiba Semiconductor
|
| TPC8A03-H |
TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode
|
Toshiba Semiconductor
|
| HN1K06FU |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
|
| SSM6N03FE |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
|
