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SSG35C30Y - 可控硅| 300V五（DRM）的| 35A条口（T）的有效值| FBASE受体- HW30 可控硅| 500V五（DRM）的| 35A条口（T）的有效值| FBASE受体- HW30 TRIAC|300V V(DRM)|35A I(T)RMS|FBASE-R-HW30

SSG35C30Y_3439234.PDF Datasheet


Part No.	SSG35C30Y SSG35C50Y
Description	可控硅\| 300V五（DRM）的\| 35A条口（T）的有效值\| FBASE受体- HW30 可控硅\| 500V五（DRM）的\| 35A条口（T）的有效值\| FBASE受体- HW30 TRIAC\|300V V(DRM)\|35A I(T)RMS\|FBASE-R-HW30
File Size	571.19K / 4 Page
Maker	N/A
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