| PART |
Description |
Maker |
| 29F016-90 |
16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY
|
Macronix International Co., Ltd.
|
| MX29F016T4I-90 MX29F016TI-90 MX29F016MI-90 |
16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY
FPGA - 200000 SYSTEM GATE 2.5 VOLT - NOT RECOMMENDED for NEW DESIGN 2M X 8 FLASH 5V PROM, 90 ns, PDSO44
|
Macronix International Co., Ltd.
|
| UPD4416001G5-A17-9JF UPD4416001G5-A15-9JF UPD44160 |
16M X 1 STANDARD SRAM, 15 ns, PDSO54
16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT 1,600位CMOS快速静态存储器1,600 - Word1
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| MX29F4000 MX29F4000PC-12 MX29F4000PC-55 MX29F4000P |
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY
|
Macronix International
|
| MX29LV065XBI-90 MX29LV065 MX29LV065TC-12 MX29LV065 |
64M-BIT [8M x 8] CMOS EQUAL SECTOR FLASH MEMORY
|
MCNIX[Macronix International]
|
| TC58FVB160-12 TC58FVB160-85 |
16M Bit (1M×16Bits ) CMOS NAND EEPROM(16M CMOS与非EEPROM) 1,600位（100万16位）的CMOS闪存EEPROM的（1,600 EEPROM中的CMOS与非
|
Toshiba Corporation
Toshiba, Corp.
|
| MBM29LV017-12 MBM29LV017-90 MBM29LV017-90PBT MBM29 |
FLASH MEMORY 16M (2M x 8) BIT
CMOS 16M (2M x 8) bit
|
Fujitsu Microelectronics
|
| MX29LV040CQC-70G MX29LV040CTI-90G 29LV040C-55R 29L |
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY
|
MCNIX[Macronix International]
|
| 29LV040C-55R 29LV040C-90 29LV040C-70 |
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY
|
Macronix International Co., Ltd.
|
| MX29F040CTI-90G 29F040C-55 29F040C-70 29F040C-90 M |
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY
|
MCNIX[Macronix International]
|
| HYB3165400ATL-60 HYB3165400ATL-50 HYB3165400ATL-40 |
16M x 4 Bit 8k DRAM
16M x 4-Bit Dynamic RAM (4k & 8k Refresh)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| TC58NS128ADC |
128-MBIT (16M x 8 BITS) CMOS NAND E PROM (16M BYTE SmartMedia )
|
TOSHIBA
|
