| PART |
Description |
Maker |
| BS62LV2016SI BS62LV2009 BS62LV2009DC BS62LV2009DC- |
Asynchronous 2M(256Kx8) bits Static RAM
Very Low Power/Voltage CMOS SRAM 256K X 8 bit 非常低功电压CMOS SRAM56K × 8
|
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
| KM68U2000 KM68V2000 |
256Kx8 bit Low Power and Low Voltage CMOS Static RAM(256K x 8位低功耗和低电压CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM684000LI KM684000LI-10 KM684000LI-10L KM684000LI |
512Kx8 bit CMOS static RAM, 85ns, low power
Quadruple Bilateral Analog Switch 14-TSSOP -40 to 85 524288亩字× 8位高速CMOS静态RAM
524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 524288亩字× 8位高速CMOS静态RAM
RES 1.6K-OHM 1% 0.063W 200PPM THK-FILM SMD-0603 TR-7-PA
512Kx8 bit CMOS static RAM, 100ns, low power
512Kx8 bit CMOS static RAM, 70ns, low power
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| BS616LV2025 |
Asynchronous 2M(256Kx8 or 128Kx16 Switchable) bits Static RAM
From old datasheet system
|
BSI
|
| IS62C1024-35Q IS62C1024-35QI IS62C1024 16_62C1024 |
70ns; 5V; 128K x 8 high-speed CMOS static RAM
Micro LED; LED Color:Red Orange; Luminous Intensity:80ucd; Viewing Angle:140 ; Forward Voltage:2.2V; Color:Red/Orange; Package/Case:1210; Reel Quantity:3000; Wavelength:630nm RoHS Compliant: Yes 128K的8高速CMOS静态RAM
128K x 8 HIGH-SPEED CMOS STATIC RAM 128K的8高速CMOS静态RAM
From old datasheet system
ASYNCHRONOUS STATIC RAM
128K x 8 HIGH-SPEED CMOS STATIC RAM
|
Advanced Interconnections, Corp.
SIEMENS AG
Integrated Silicon Solution, Inc.
ICSI[Integrated Circuit Solution Inc]
Integrated Circuit Solu...
|
| CAT59C11P CAT59C11PI CAT59C11K-TE13 CAT59C11K-TE7 |
256K x 4 Static RAM
2M x 8 Static RAM
Microwire Serial EEPROM
16-Mbit (2M x 8) Static RAM 微型导线串行EEPROM
512K x 32 Static RAM
|
Atmel, Corp.
|
| K6T1008C2C K6T1008C2C-RB55 K6T1008C2C-RB70 K6T1008 |
128K X 8 STANDARD SRAM, 70 ns, PDSO32
128K x8 bit Low Power CMOS Static RAM 128K的x8位低功CMOS静态RAM
128K x8 bit Low Power CMOS Static RAM 128K的x8位低功耗CMOS静态RAM
55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM
55ns; 128 x 8-bit low power CMOS static RAM
70ns; 128 x 8-bit low power CMOS static RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| STK22C48 STK22C48N25 STK22C48N35 STK22C48N35I STK2 |
2K x 8 AutoStore?/a> nvSRAM QuantumTrap?/a> CMOS Nonvolatile Static RAM
2K x 8 AutoStore nvSRAM QuantumTrap CMOS Nonvolatile Static RAM
2K x 8 AutoStore⑩ nvSRAM QuantumTrap⑩ CMOS Nonvolatile Static RAM
2K X 8 AUTOSTORE⒙ NVSRAM QUANTUMTRAP⒙ CMOS NONVOLATILE STATIC RAM
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| IDT7MB4048S35P IDT7MB4048S25P IDT7MB4048 IDT7MB404 |
512K x 8 CMOS STATIC RAM MODULE
|
IDT[Integrated Device Technology]
|
| CAT5114SI-00TE13 CAT5114U-10TE13 CAT5114U-00TE13 C |
DIGITAL POTENTIOMETER|CMOS|SOP|8PIN|PLASTIC
128K x 8 Static RAM
512K x 24 Static RAM 数字电位器|的CMOS | TSSOP封装| 8引脚|塑料
|
Analog Devices, Inc.
|
| AM29LV200BT70WAE AM29LV200BT70WAC AM29LV200BT70WAI |
EEPROM|FLASH|128KX16/256KX8|CMOS|SOP|44PIN|PLASTIC
16-Kb I2C CMOS Serial EEPROM, SOT-23
16-Kb I2C CMOS Serial EEPROM, SOIC
EEPROM|FLASH|128KX16/256KX8|CMOS|TSSOP|48PIN|PLASTIC 的EEPROM | FLASH动画| 128KX16/256KX8 |的CMOS | TSSOP封装| 48PIN |塑料
EEPROM|FLASH|128KX16/256KX8|CMOS|BGA|48PIN|PLASTIC 的EEPROM | FLASH动画| 128KX16/256KX8 |的CMOS | BGA封装| 48PIN |塑料
|
Advanced Micro Devices, Inc.
Spansion, Inc.
|
