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KMM53216004BV - 16M x 32 DRAM SIMM(16M x 32 动RAM模块)

KMM53216004BV_3331326.PDF Datasheet


 Full text search : 16M x 32 DRAM SIMM(16M x 32 动RAM模块)


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Bipolar Transistor; Collector Emitter Voltage, Vceo:75V; Power Dissipation, Pd:1.67W; DC Current Gain Min (hfe):120; C-E Breakdown Voltage:75V; Collector Current:1A; Transistor Polarity:NPN RoHS Compliant: Yes 16M X 4 FAST PAGE DRAM, 60 ns, PDSO32
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