| PART |
Description |
Maker |
| ADY27IV AL100 AL102 AL103 ASZ17 ASZ15 ASZ16 ASZ18 |
TRANSISTOR | BJT | PNP | 130V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 130V V(BR)CEO | 6A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 8A I(C) | TO-3
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 8A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 26V V(BR)CEO | 4A I(C) | TO-66VAR
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 600MA I(C) | TO-8
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | TO-8
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 600MA I(C) | TO-8
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 4A I(C) | TO-3
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 20A I(C)
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 6A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 6A I(C) | TO-3
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 6A I(C) | TO-3
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 3A I(C) | TO-3
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 3.5A I(C) | TO-3 晶体管|晶体管|进步党| 30V的五（巴西）总裁| 3.5AI（丙）|
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-3 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 3A条一c）|
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 10A I(C) | TO-41 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 10A条一（c）|1
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 8A I(C) | TO-8 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 8A条一（c）|
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 3A I(C) | TO-3 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 3A条一（c）|
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 25A I(C) 晶体管|晶体管|进步党| 60V的五（巴西）总裁|5A一（c
|
Cypress Semiconductor, Corp.
Vicor, Corp.
Atmel, Corp.
Advanced Analogic Technologies, Inc.
EPCOS AG
|
| ECG130MP ECG152 ECG153 ECG155 ECG153MP ECG159MCP E |
Finger guards Round type - suction side - Adaptation machine-Frame size : 200mm; Surface Finishing: Cation electropainting; Adaptation Machine: San Ace 200(suction side);
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7A I(C) | TO-220
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 3A I(C) | TO-3VAR
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 7A I(C) | TO-220AB
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-92 晶体管|晶体管|进步党| 80V的五（巴西）总裁| 1A条一（c）|2
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-1 晶体管|晶体管|进步党| 32V的五（巴西）总裁| 1A条一（c）|
|
TE Connectivity, Ltd.
Aeroflex, Inc.
|
| FXT3866SM FXT449SM FXT549SM FXT749SM FXT649SM FXT6 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | SOT-89
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | SOT-89
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 2A I(C) | SO
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 2A I(C) | SO
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 500MA I(C) | SO
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管| npn型| 150伏五（巴西）总裁| 1A条一（c）|
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 2A I(C) | SO 晶体管|晶体管|进步党| 100V的五（巴西）总裁|甲一（c）|
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | SOT-89 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 1A条一（c）|采用SOT - 89
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管|叩| 45V的五（巴西）总裁| 1A条一（c）|
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 400MA I(C) | SO 晶体管|晶体管|叩| 30V的五（巴西）总裁| 400mA的一（c）|
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | SOT-89
|
Zetex Semiconductor PLC
Fujitsu, Ltd.
Bourns, Inc.
Amphenol, Corp.
|
| BCX76-40 BF413 BC140-25 BC537-16 MPS6573 BC328-10 |
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 800MA I(C) | TO-92
TRANSISTOR | BJT | NPN | 170V V(BR)CEO | 50MA I(C) | TO-92
Stratix II GX FPGA 130K FPGA-1508
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | TO-92
TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 200MA I(C) | TO-92
IC MAX 7000 CPLD 64 44-TQFP
IC FLEX 10KA FPGA
Cyclone II FPGA 50K FBGA-484
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | TO-92
2GB DDR2 SDRAM VLP DIMM
MAX 7000 CPLD 128 MC 100-TQFP
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 5A I(C) | TO-37
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | TO-92
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | TO-92
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 100MA I(C) | TO-18
Cyclone FPGA 6K PQFP-240
CYCLONE III FPGA 119K 484FBGA
MAX 7000 CPLD 64 MC 100-TQFP
MAX 3000A CPLD 32 MC 44-TQFP
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
TRANSISTOR | BJT | NPN | 1A I(C) | TO-105
Dual Matched Amplifiers with Digitally Programmable Gain in MSOP; Package: MSOP; No of Pins: 10; Temperature Range: 0°C to 70°C
IC MAX 7000 CPLD 128 144-TQFP
MAX II CPLD 1270 LE 144-TQFP
Programmable Logic IC; Logic Type:Programmable; No. of Macrocells:220; Package/Case:484-FBGA; Leaded Process Compatible:No; Number of Circuits:1728; Peak Reflow Compatible (260 C):No RoHS Compliant: No
Leaded Cartridge Fuse; Current Rating:12A; Voltage Rating:32V; Fuse Terminals:Axial Lead; Fuse Type:Time Delay; Voltage Rating:32V; Body Material:Glass; Diameter:6.985mm; Leaded Process Compatible:Yes; Length:32.385mm; Series:315P RoHS Compliant: Yes
TRANSISTOR | BJT | PNP | 6V V(BR)CEO | TO-18 晶体管|晶体管|进步党| 6V的五（巴西）总裁|8
TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 100MA I(C) | TO-92 晶体管|晶体管|叩| 18V的五（巴西）总裁| 100mA的一（c）|2
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | TO-92 晶体管|晶体管|进步党| 25V的五（巴西）总裁|2
MAX 7000 CPLD 512 MC 208-PQFP 晶体管|晶体管|叩| 20V的五（巴西）总裁| 500mA的一（c）|2
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 1A I(C) | TO-92 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 1A条一（c）|2
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | TO-18
|
EM Microelectronic
Bourns, Inc.
SEMIKRON
Samsung Semiconductor Co., Ltd.
California Eastern Laboratories, Inc.
|
| CENW51 CENW57 CENW51A CENW55 CENW56 CENW92 |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 1A I(C) | TO-237VAR
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 500MA I(C) | TO-237VAR
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 1A I(C) | TO-237VAR
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 500MA I(C) | TO-237VAR
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 500MA I(C) | TO-237VAR
TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 500MA I(C) | TO-237VAR 晶体管|晶体管|进步党| 300V五（巴西）总裁| 500mA的一（c）|37VAR
|
SMSC, Corp.
|
| CSB737R CSB737Q CSA1048GR CSB564AO CSA1266O CSA104 |
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 300MA I(C) | TO-92
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 1A I(C) | TO-92
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 150MA I(C) | TO-92 晶体管|晶体管|进步党| 50V五（巴西）总裁| 150毫安一（c）|2
|
Vishay Intertechnology, Inc.
|
| 2SB1051KQ |
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | SOT-23VAR 晶体管|晶体管|进步党| 32V的五（巴西）总裁| 1A条一（c）|的SOT - 23VAR
|
Rohm Co., Ltd.
|
| 2SA1009 2SA1009A 2SA1009AH 2SA1009AM 2SA1009J 2SA1 |
PNP SILICON POWER TRANSISTORS 进步党硅功率晶体
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路
2 A, 350 V, PNP, Si, POWER TRANSISTOR, TO-220AB
TRANSISTOR | BJT | PNP | 350V V(BR)CEO | 2A I(C) | TO-220AB
TRANSISTOR | BJT | PNP | 400V V(BR)CEO | 2A I(C) | TO-220AB
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| 2SB331 2SB330 2SD331E |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 2A I(C) | TO-220AB
TRANSISTOR | BJT | PNP | 150MA I(C) | TO-5
NPN/PNP Triple Diffused Planar Silicon Transistors, Low Freq. Power Amp. Applications
|
Sanyo Semiconductor
|
| 2SA1460 2SA1460-AZ 2SA1460-L-AZ 2SA1460L 2SA1460K |
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 1A I(C) | TO-221VAR
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
1000 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
PNP SILICON TRANSISTOR
|
Electronic Theatre Controls, Inc.
ETC
List of Unclassifed Manufacturers
|
| ECG105 ECG85 ECG91 ECG90 ECG92 ECG101 |
Pressure (Pa): 770 ( 3.09inchH2O / 75.1 ( 0.30inchH2O ); Noise (dB[A]): 71 / 40; Mass (g): 760;
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 400MA I(C) | TO-92
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 50MA I(C) | TO-92VAR
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-92VAR
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 15A I(C) | SIP 晶体管|晶体管| npn型| 200伏五（巴西）总裁| 15A条（c）的|园区
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | TO-5 晶体管|晶体管|叩| 20V的五（巴西）总裁| 300mA的一（c）|
|
NXP Semiconductors N.V.
|
