| PART |
Description |
Maker |
| V53C102AK70 V53C102AK70L V53C102AK10 V53C102AK10L |
x1 Static Column Mode DRAM x1静态列模式DRAM
|
ON Semiconductor
|
| AK491024GP-12 AK491024GK-12 AK491024GK-80 AK491024 |
x(8 1) Page Mode DRAM Module
× 1）静态列模式DRAM模块
× 1）页面模式内存模
x(8 1) Static Column Mode DRAM Module ×8 1）静态列模式DRAM模块
|
Molex, Inc.
|
| MCM514258J10 |
256K X 4 STATIC COLUMN DRAM, 100 ns, PDSO20
|
MOTOROLA INC
|
| MSM514102D-60SJ MSM514102D-60ZS MSM514102D-60TS-K |
Tape FOIL TAPE KIT
4,194,304-Word X 1-Bit DYNAMIC RAM : STATIC COLUMN MODE TYPE 4194304字1位动态随机存储器：静态列型模
|
OKI SEMICONDUCTOR CO., LTD.
|
| UPD4265805G5-A50-7JD UPD4264805G5-A50-7JD UPD42658 |
18-Mbit QDR™-II SRAM 2-Word Burst Architecture
1-Mbit (64K x 16) Static RAM
1M x 4 Static RAM
x8 EDO Page Mode DRAM x8 EDO公司页面模式DRAM
4-Mbit (256K x 16) Static RAM
|
NEC TOKIN, Corp.
|
| UPD424440LE-70 UPD424440LE-60 UPD424440LE-80 UPD42 |
MoBL® 8-Mbit (1024K x 8) Static RAM
MoBL® 8-Mbit (512K x 16) Static RAM
CY62167DV30 MoBL® - 16-Mbit (1M x 16) Static RAM
x4 Fast Page Mode DRAM x4快速页面模式的DRAM
|
Vishay Intertechnology, Inc.
|
| UPD4264405G5-A50-7JD UPD4265405G5-A50-7JD UPD42S65 |
2-Mbit (128K x 18) Flow-Through SRAM with NoBL™ Architecture
x4 EDO Page Mode DRAM
512K (32K x 16) Static RAM
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
128K x 8 Static RAM 128K的8静态RAM
|
Omron Electronics, LLC
|
| UPD424402LB-70L UPD424402V-60 UPD424402V-60L UPD42 |
COMLINK™ SERIES 1:10 Clock Fanout Buffer with Output Enable
ComLink™ Series 1:4 Clock Fanout Buffer
ComLink™ Series 1:8 Clock Fanout Buffer
ComLink™ Series High-drive Two-Channel LVDS Repeater/Mux
x4 Static Column Mode DRAM x4静态列模式DRAM
COMLINK™ SERIES 1:10 Clock Fanout Buffer with Output Enable
ComLink™ Series 1:8 Clock Fanout Buffer
|
TE Connectivity, Ltd.
|
| AS4C256K16F0-25JC AS4C256K16F0-25JI AS4C256K16F0-2 |
5V 256K x 16 CM0S DRAM (fast page mode), 30ns RAS access time
x16FastPageModeDRAM
5V 256K X 16 CMOS DRAM (Fast Page Mode)
5V 256K x 16 CM0S DRAM (fast page mode), 35ns RAS access time
5V 256K x 16 CM0S DRAM (fast page mode), 50ns RAS access time
5V 256K x 16 CM0S DRAM (fast page mode), 25ns RAS access time
|
Alliance Semiconductor Corporation
|
| MT4C16270 |
DRAM 256K X 16 DRAM 5V / EDO PAGE MODE
|
Micron Technology
|
| MT4C4001JECJ-10/883C MT4C4001JECJ-10/IT MT4C4001JE |
1 MEG x 4 DRAM Fast Page Mode DRAM
|
Austin Semiconductor
http://
|
| AS4C256K16F0-30TC AS4C256K16F0-50TC AS4C256K16F0-5 |
5V 256K X 16 CMOS DRAM (Fast Page Mode)
256K X 16 FAST PAGE DRAM, 50 ns, PDSO40
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
Alliance Semiconductor Corp...
Electronic Theatre Controls, Inc.
|
