| PART |
Description |
Maker |
| AKD4563A AK4563A AK4563AVF |
16bit 4AD/2DA APGA/ALC 3V
Low Power 16bit 4ch ADC & 2ch DAC with ALC
|
AKM
Asahi Kasei Microsystems
|
| AK4641EN |
16bit stereo CODEC with built-in Microphone-amplifier and 16bit Mono CODEC for Bluetooth Interface.
|
Asahi Kasei Microsystems
|
| KM416S4030C KM416S4030CT-F10 KM416S4030CT-F7 KM416 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz
1M x 16Bit x 4 Banks Synchronous DRAM 100万16 × 4银行同步DRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| BM10B-10DP-0.4V BM10B0.6-10DP-0.4V51 |
CONTACT RESISTANCE: 20mV AC OR LESS 1khz, 1m A.
|
Hirose Electric
|
| BM10B-50DP-0.4V BM10B0.8-50DP-0.4V51 |
CONTACT RESISTANCE: 20mV AC OR LESS 1khz, 1m A.
|
Hirose Electric
|
| LTC6900 LTC6900CS5 LTC6900IS5 |
Low Power, 1kHz to 20MHz Resistor Set SOT-23 Oscillator
|
LINER[Linear Technology]
|
| HY51VS18163HG HY51V18163HGT-6 HY51V18163HGJ HY51V1 |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power
1M x 16Bit EDO DRAM 100万16 EDO公司的DRAM
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 50 ns, PDSO44
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 60 ns, PDSO44
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor, Inc.
|
| LTC1799CS5 LTC1799IS5 LT1799 |
From old datasheet system
1kHz to 30MHz Resistor Set SOT-23 Oscillator SPECIALTY ANALOG CIRCUIT, PDSO5
|
Linear Technology, Corp.
Linear Technology Corporation
LINER[Linear Technology]
http://
|
| A43L8316AV-5 A43L8316AV-5.5 A43L8316AV-6 A43L8316A |
Cycle time:5ns; 200MHz CL=3 access time:4.5ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:5.5ns; 183MHz CL=3 access time:5.0ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:6ns; 166MHz CL=3 access time:5.5ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:7ns; 143MHz CL=3 access time:6.0ns 128K x 16bit x 2banks synchronous DRAM
|
AMIC Technology
|
| TB62706 TB62706BF TB62706BN TB6206BN EE08018 |
16BIT SHIFT REGISTER / LATCHES & CONSTANT CURRENT DRIVERS
16BIT SHIFT REGISTER, LATCHES & CONSTANT CURRENT DRIVERS
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| TB62701N E004109 |
16BIT SHIFT REGISTER / LATCH & CONSTANT CURRENT DRIVERS
16BIT SHIFT REGISTER, LATCH & CONSTANT CURRENT DRIVERS
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| HY51V18163HGJ HY51V18163HGJ-5 HY51V18163HGJ-6 HY51 |
1M x 16Bit EDO DRAM
|
Hynix Semiconductor
|
