| PART |
Description |
Maker |
| HYMD18M645AL6-H HYMD18M645AL6-K HYMD18M645A6-H HYM |
SDRAM|DDR|8MX64|CMOS|DIMM|200PIN|PLASTIC
8M X 64 DDR DRAM MODULE, 0.75 ns, DMA200 67.60 X 31.75 X 1 MM, SODIMM-200
|
Hynix Semiconductor, Inc.
|
| M470L1713CT0 |
16Mx64 200pin DDR SDRAM SODIMM based on 16Mx8 Data Sheet
|
Samsung Electronic
|
| M464S0924DTS M464S0924DTS-C1H M464S0924DTS-C1L M46 |
8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD 8Mx64 SDRAM内存的SODIMMM × 16位，4BanksK的刷新，3.3V的同步DRAM的社民党
8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| KMM366S804BTL |
8Mx64 SDRAM DIMM(8Mx64 动RAM模块) 8Mx64 SDRAM的内存（8Mx64动态内存模块）
|
Samsung Semiconductor Co., Ltd.
|
| KMM366S824BTL |
8Mx64 SDRAM DIMM(8Mx64 动RAM模块) 8Mx64 SDRAM的内存（8Mx64动态内存模块）
|
Samsung Semiconductor Co., Ltd.
|
| MT18VDDF12872HY-335XX MT18VDDF12872HG-265 MT18VDDF |
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA200
DDR SDRAM SODIMM
|
Micron Technology
|
| ST62P20CM3/XXX ST62P10CM6/XXX ST62P10CM1/XXX ST62P |
8-BIT MICROCONTROLLER
IC, SDRAM, DDR400, 16MEGX16
1GB DDR SDRAM SODIMM 8位微控制
|
Exar, Corp.
|
| HYMD512M646DFP8-D43 HYMD512M646DFP8-H HYMD512M646D |
200pin DDR SDRAM SO-DIMMs based on 512Mb D ver. (FBGA)
|
Hynix Semiconductor
|
| HYMP112S64M8-C4 HYMP564S646-E3 HYMP532S64P6-E3 |
200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver. 128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200
200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver. 64M X 64 DDR DRAM MODULE, 0.6 ns, ZMA200
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| NT256D64S88A2GM NT256D64S88A2GM-7K NT256D64S88A2GM |
256Mb: 32Mx64 unbuffered DDR SO-DIMM module based 32Mx8 SDRAM
200pin One Bank Unbuffered DDR SO-DIMM 200pin一个银行缓冲的DDR SO - DIMM插槽
|
NANYA
ETC
Electronic Theatre Controls, Inc.
|
| M485L1624FT0-CA2 M470L3224FT0-CB0 M470L3224FT0-CB3 |
DDR SDRAM SODIMM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
