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M5M4V64S30ATP-12 - 64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM

M5M4V64S30ATP-12_3173467.PDF Datasheet


 Full text search : 64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
 Product Description search : 64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM


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M2V64S20BTP M2V64S20BTP-10 M2V64S20BTP-10L M2V64S2 64M bit Synchronous DRAM
4-BANK x 2097152-WORD x 8-BIT
4-BANK x 1048576-WORD x 16-BIT
4-BANK x 4194304-WORD x 4-BIT
From old datasheet system
MITSUBISHI[Mitsubishi Electric Semiconductor]
M5M4V64S40ATP-8A M5M4V64S40ATP-10 A98009_A M5M4V64 From old datasheet system
64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM
MITSUBISHI[Mitsubishi Electric Semiconductor]
M5M4V64S20ATP-8 M5M4V64S20ATP-10 M5M4V64S20ATP-12 From old datasheet system
64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
MITSUBISHI[Mitsubishi Electric Semiconductor]
IBM13N64734HCA 64M x 72 Two-Bank Unbuffered SDRAM Module(64M x 64 2组不带缓冲同步动态RAM模块) 64米72双行缓冲内存模组4米64 2组不带缓冲同步动态内存模块)
International Business Machines, Corp.
IBM13M64734BCA 64M x 72 1 Bank Registered/Buffered SDRAM Module(64M x 72 1组寄缓冲同步动态RAM模块)
IBM Microeletronics
MR26V25655J 8M-Word x 32Bit or 64M-Word x 16Bit P2ROM
OKI electronic components
OKI Semiconductor
HM5216808CSERIES 5216808C 1,048,576-word ′ 8-bit ′ 2-bank Synchronous Dynamic RAM (SSTL-3) 2,097,152-word ′ 4-bit ′ 2-bank Synchronous Dynamic RAM (SSTL-3)
From old datasheet system
hitachi
UPD23C64300F9-XXX-BC3 UPD23C64300 UPD23C64300F9-BC 64M-BIT MASK-PROGRAMMABLE ROM 8M-WORD BY 8-BIT (BYTE MODE) / 4M-WORD BY 16-BIT (WORD MODE) 6400位掩膜可编程ROM00万字位(字节模式 4分字6位(字模式)
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NEC, Corp.
NEC Corp.
NEC[NEC]
UPD4564323 UPD4564323G5-A10-9JH UPD4564323G5-A10B- 64M-bit Synchronous DRAM 4-bank LVTTL
64M-bit Synchronous DRAM 4-bank, LVTTL
NEC[NEC]
K8S6415EBB (K8S6415ExB) 64M Bit Multi Bank NOR Flash Memory
Samsung semiconductor
K8D6316UBM-LC09 K8D6316UBM-LI09 K8D6316UBM-PI07 K8 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
SAMSUNG SEMICONDUCTOR CO. LTD.
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