| PART |
Description |
Maker |
| AN1473 |
HOW TO USE THE WRITE TO BUFFER FEATURE OF THE M58LW064 FAMILY OF FLASH MEMORIES
|
SGS Thomson Microelectronics
|
| ARM720T |
General-purpose 32-bit Microprocessor with 8KB cache, enlarged Write buffer, and Memory Management Unit (MMU) combined in a single chip
|
Electronic Theatre Controls, Inc.
|
| AT34C02B |
2K, 2-wire Bus Serial EEPROM with permanent software write protection and reversible software write protection.
|
Atmel
|
| DS28E10P DS28E10RT DS28E10PT DS28E1011 CAT1021YI-3 |
1-Wire SHA-1 Authenticator Irreversible Write Protection
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
2K/4K-Bit Serial EEPROM with Partial Array Write Protection 2K/4K-Bit偏串行EEPROM阵列写保
|
Maxim Integrated Products
|
| XR-511R-4D XR-511-6CP XR-511-6CJ XR-511-6D XR-511R |
4-Channel Disk/Tape Read/Write Circuit
8-Channel Disk Read/Write Circuit 8通道磁盘写电
6-Channel Read/Write Circuit 6通道写电
|
Linear Technology, Corp.
|
| SSI32R511-8F SSI32R516-6CH SSI32R516-6CL SSI32R516 |
4-Channel Disk/Tape Read/Write Circuit
8-Channel Disk Read/Write Circuit 8通道磁盘写电
6-Channel Read/Write Circuit 6通道写电
|
API Delevan
|
| VM710625CSSJ VM710820CPOJ VTCINC-VM710820POJ VM710 |
6 CHANNEL READ WRITE AMPLIFIER CIRCUIT, PDSO24
8 CHANNEL READ WRITE AMPLIFIER CIRCUIT, PDSO36
2 CHANNEL READ WRITE AMPLIFIER CIRCUIT, PDSO16
|
VTC INC
|
| BH6626FS |
Magnetic Disk LSIs > FDD read/write amplifier
Read /Write amplifier for FDD
|
ROHM[Rohm]
|
| CD4049UBC CD4050B CD4050BC CD4049UBC02 CD4050BCN C |
LOGIC GATE|HEX INVERTER|CMOS|SOP|16PIN|PLASTIC
HEX INVERTING BUFFER HEX NON-INVERTING BUFFER
Hex Inverting Buffer •
Hex Inverting Buffer ?Hex Non-Inverting Buffer
|
FAIRCHILD[Fairchild Semiconductor]
|
| GS8170LW36AC |
18Mb B>1x1Lp CMOS I/O Late Write SigmaRAM
18Mb x1Lp CMOS I/O Late Write SigmaRAM 35.7x1Lp的CMOS的I / O后写SigmaRAM
|
GSI Technology, Inc.
|
| GS8170DW36C-250 GS8170DW36C-250I GS8170DW36C-300 G |
250MHz 512K x 36 18MB double late write sigmaRAM SRAM
300MHz 512K x 36 18MB double late write sigmaRAM SRAM
333MHz 512K x 36 18MB double late write sigmaRAM SRAM
333MHz 256K x 72 18MB double late write sigmaRAM SRAM
|
GSI Technology
|
| SSI32R501-8F SSI32R501R-6CL SSI32R501-6F |
8-Channel Disk Read/Write Circuit
6-Channel Read/Write Circuit 6通道写电
|
Sumida, Corp.
|
