| PART |
Description |
Maker |
| HY57V561620HLT HY57V561620HT-H |
x16 SDRAM
IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC
|
Hynix
|
| K4X56163PE-LG K4X56163PE-LFG |
16M x16 Mobile DDR SDRAM 1,600 x16移动DDR SDRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| UPD45128441G5-A10BL9JF UPD45128841G5-A10BL9JF UPD4 |
x8 SDRAM
x16 SDRAM
x4 SDRAM x4内存
|
Elpida Memory, Inc.
|
| MB84VD23180FM |
64M (x16) FLASH MEMORY AND 4M (x16) STATIC RAM 6400（x16）的快闪记忆体和4M（x16）的静态RAM
|
Spansion, Inc.
|
| W981216AH-8H W981216AH-75 W981216AH |
2M x 16 bit x 4 Banks SDRAM
x16 SDRAM 8M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
|
Winbond Electronics, Corp.
Winbond Electronics Corp
|
| MT48LC128M4A207 |
512Mb x4, x8, x16 SDRAM
|
Micron Technology
|
| HY57V281620ALT-10 |
x16 SDRAM x16内存
|
Hynix Semiconductor, Inc.
|
| IS43DR81280B |
1Gb (x8, x16) DDR2 SDRAM
|
Integrated Silicon Solution, Inc
|
| MT47H16M16BG-3ITB |
256Mb: x4, x8, x16 DDR2 SDRAM
|
Micron Technology
|
| K4X56163PG |
16M x16 Mobile-DDR SDRAM
|
Samsung semiconductor
|
| HYB18T512161B2F-20/25 |
512-Mbit x16 DDR2 SDRAM
|
Qimonda AG
|
|
