| PART |
Description |
Maker |
| ISR2800DESRH ISR2800DHURH ISR2800DHDRH ISR2805DHDR |
2-OUTPUT 2.5 W DC-DC REG PWR SUPPLY MODULE
Adj, Radiation hardened high-power, high efficiency DC-DC power converter
5V, Radiation hardened high-power, high efficiency DC-DC power converter
|
MS KENNEDY CORP
M.S. Kennedy Corp.
|
| FD2000DU-120 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE 高功率，高频率，按包装类
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| UN100 |
NPN, high power transistor. For high power audio and linear applications. Power switching circuits such as relay or solenoid drivers, DC to DC converters or inverters. Vceo = 100Vdc, Vcer = 100Vdc, Vcb = 200Vdc, Veb = 7Vcd, Ic = 15Adc, PD
|
USHA India LTD
|
| AWT6111 AWT6111_REV_2.0 |
The AWT6111 is a high power high efficiency amplifier module for Dual Mode CDMA/AMPS wireless handset applications.
From old datasheet system
Power Amplifiers
|
Anadigics Inc
|
| BUT70W 8602 |
HIGH VOLTAGE NPN POWER TRANSISTOR
HIGH POWER NPN TRANSISTOR
From old datasheet system
HIGH VOLTAGE NPN POWER TRANSISTOR
8-bit MCU for automotive, 16 Kbyte Flash/ROM, 10-bit ADC, 4 timers, SPI, SCI
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| 2SD1313 E001105 |
NPN TRIPLE DIFFUSED TYPE (HIGH POWER AMPLIFIER, SWITCHING APPLICATIONS)
From old datasheet system
HIGH POWER AMPLIFIER APPLICATIONS HIGH POWER SWITCHING APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
| BUX82 |
HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR
|
Seme LAB
|
| FD1000FH-56 |
1000 A, 2800 V, SILICON, RECTIFIER DIODE
HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
|
Mitsubishi Electric Semiconductor
|
| HSMS-2700-BLK HSMS-2700-TR2 HSMS-2702-BLK HSMS-270 |
HSMS-270C · High power clipping/clamping diode
HSMS-270B · High power clipping/clamping diode
HSMS-2702 · High power clipping/clamping diode
HSMS-2700 · High power clipping/clamping diode
High Performance Schottky Diode for Transient Suppression
|
Agilent (Hewlett-Packard)
Agilent(Hewlett-Packard)
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
