PART |
Description |
Maker |
SPIRIT1 |
Low data rate, low power sub-1GHZ transceiver
|
STMicroelectronics
|
FSAV430MTCX FSAV430QSCX |
Low Voltage Ultra Low Power High Bandwidth (1.1GHz) Quad SPDT Video Switch
|
Fairchild Semiconductor
|
MB1503 |
LOW-POWER PLL FREQUENCY SYNTHESIZER WITH POWER SAVE FUNCTION (1.1GHz)
|
Fujitsu Component Limited. Fujitsu Media Devices Limited
|
PE4246 |
Absorbtive SPST ;Operating Frequency (MHz) = DC - 5000 ;; P1dB (dBm) = 33 ;; Insertion Loss (dB, 1GHz) = 0.80 ;; ISOlation (dB, 1GHz) = 55 ;6L MLPM
|
PEREQRINE
|
D10040240GT |
40 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER GaAs Power Doubler, 40 - 1000MHz, 24.0dB min. Gain @ 1GHz, 375mA max. @ 24VDC
|
RF MICRO DEVICES INC PREMIER DEVICES, INC.
|
D2221UK |
METAL GATE RF SILICON FET Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-12.5V-1GHz,单端)
|
SemeLAB SEME-LAB[Seme LAB]
|
NJG1105F |
1.9/2.1GHz LOW NOISE AMPLIFIER GaAs MMIC
|
NJRC[New Japan Radio]
|
ABA3100S3TR |
1GHz Balanced Low Noise Linear Amplifier
|
Skyworks Solutions
|
SA631DK SA631 |
1GHz low voltage LNA and mixer From old datasheet system
|
PHILIPS[Philips Semiconductors]
|
SA601 |
Low voltage LNA and mixer - 1GHz From old datasheet system
|
Philips
|
EIB1718A-2P |
17.3-18.1GHz, 1W internally matched power FET
|
Excelics Semiconductor
|