| PART |
Description |
Maker |
| 256458 256460 256459 256486 256483 256485 256484 2 |
Low-Power, 16-Bit Analog-to-Digital Converters with Parallel Interface
SIGN TOXIC
SIGN VERY TOXIC CD40
2x4-Channel, Simultaneous-Sampling 12-Bit ADCs 标志有害
|
Linear Technology, Corp.
|
| HDSP-5703-K0300 HDSP-5603-I0300 HDSP-5603-E0300 HD |
SIGN DISPLAY, YELLOW, 14.22 mm 0.560 INCH, PLASTIC, DIP-10
SIGN DISPLAY, GREEN, 14.22 mm 0.560 INCH, PLASTIC, DIP-10
SIGN DISPLAY, HIGH EFFICIENCY RED, 14.22 mm
SIGN DISPLAY, ORANGE, 14.22 mm
7 SEG NUMERIC DISPLAY, YELLOW, 14.22 mm
7 SEG NUMERIC DISPLAY, GREEN, 14.22 mm
|
WIMA
Agilent Technologies, Inc.
Infineon Technologies AG
|
| AS166-300 |
PHEMT GaAs IC High Power SP4T Switch 0.1-2.5 GHz PHEMT的砷化镓集成电路大功率SP4T开0.1-2.5千兆
PHEMT GaAs IC High Power SP4T Switch 0.1.5 GHz
|
Alpha Industries, Inc.
ALPHA[Alpha Industries]
Alpha Industries Inc
|
| TC1606 |
2W High Linearity and High Efficiency GaAs Power FETs
|
Transcom, Inc.
|
| FLL21E090IK |
High Voltage - High Power GaAs FET 高电高功率GaAs场效应管
|
Sumitomo Electric Industries, Ltd.
|
| TC1504N |
1W High Linearity and High Efficiency GaAs Power FETs
|
Transcom, Inc.
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| FLL310IQ-3A |
High Voltage - High Power GaAs FET
|
Eudyna Devices Inc
|
| CFH2162-P1 CFH2162-P109 |
800 to 900 MHz 36 dBm Power GaAs FET UHF BAND, GaAs, N-CHANNEL, RF POWER, JFET
|
Mimix Broadband, Inc.
|
| AS179-000 |
GaAs SPDT Switch 300 kHz-3 GHz Medium Power
PHEMT GaAs IC High Linearity 3 V T/R SPDT Switch 0.1-2.5 GHz
|
Skyworks Solutions Inc.
|
| FLL21E090IY |
L,S-band High Power GaAs FET
|
Eudyna Devices Inc
|
