| PART |
Description |
Maker |
| 2MBI75S 2MBI75S-120 |
IGBT MODULE ( S-Series ) 2-Pack IGBT 1200V 2X75A IGBT模块S系列，包IGBT200X75A
5-Pin, Multiple-Input, Programmable Reset ICs 100 A, 1200 V, N-CHANNEL IGBT
|
http://
FUJI[Fuji Electric]
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| C67076-A2510-A67 BSM15GD60DN2 SIEMENSAG-BSM15GD60D |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) 15 A, 600 V, N-CHANNEL IGBT
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| IXGE75N100Z IXGE50N90Z IXTE9N65X4U IXGE50N50Z |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 75A I(C)
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 900V V(BR)CES | 50A I(C)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 650V V(BR)DSS | 9A I(D) 晶体管| MOSFET功率模块|独立|650V五（巴西）直| 9A条（丁）
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 500V V(BR)CES | 50A I(C) 晶体管| IGBT功率模块|独立| 500V五（巴西）国际消费电子展| 50A条一（c
|
IXYS, Corp.
|
| FZ800R33KF1 FS150R12KF4 FD400R12KF4 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 3.3KV V(BR)CES | 800A I(C)
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 150A I(C)
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 400A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五（巴西）国际消费电子展|四楼一（c
|
Infineon Technologies AG
|
| 7MBR10SA140 |
IGBT MODULE (S series) 1400V / 10A / PIM 15 A, 1400 V, N-CHANNEL IGBT
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| CPU165MK |
IGBT SIP MODULE Short Circuit Rated UltraFast IGBT
|
IRF[International Rectifier]
|
| DIM200WBS12-A000 |
Single Switch IGBT Module 200 A, 1200 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
|
| CPV364MK |
IGBT SIP MODULE Short Circuit Rated UltraFast IGBT
|
IRF[International Rectifier]
|
| 2MBI75UA-120 |
100 A, 1200 V, N-CHANNEL IGBT
IGBT Module U-Series 1200V / 75A 2 in one-package
|
FUJI ELECTRIC CO LTD
List of Unclassifed Manufacturers
|
| FP7G75US60 |
Transfer Molded Type IGBT Module; ; No of Pins: 7; Container: Rail 75 A, 600 V, N-CHANNEL IGBT
|
Fairchild Semiconductor, Corp.
|
| GP800NSM33 |
Hi-Reliability Single Switch IGBT Module Preliminary Information 800 A, 3300 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
|
