| PART |
Description |
Maker |
| LNA2901L |
GaAs Infrared Light Emitting Diode 5 mm, 1 ELEMENT, INFRARED LED, 950 nm
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| QED123 QED122 QED121 QED122A3R0 |
PLASTIC INFRARED LIGHT EMITTING DIODE 4.95 mm, 1 ELEMENT, INFRARED LED, 890 nm
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| OP168F OP268FB OP268FPS OP268FA OP268FC OP269A OP2 |
Plastic Infrared Emitting Diode 0.76 mm, 1 ELEMENT, INFRARED LED, 890 nm
|
TT electronics OPTEK Technology
OPTEK TECHNOLOGY INC
|
| CQX15 |
GaAs INFRARED EMITTING DIODE 4.67 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Fairchild Semiconductor, Corp.
|
| AA3528AF3C |
2.4 mm, 1 ELEMENT, INFRARED LED, 940 nm
3.5x2.8 mm INFRARED EMITTING DIODE
|
Kingbright Corporation
|
| LED55CB |
GaAs Infrared Emitting Diode; Package: TO-46; No of Pins: 2; Container: Bulk 1 ELEMENT, INFRARED LED, 940 nm
|
Fairchild Semiconductor, Corp.
|
| TLN233 |
TOSHIBA Infrared LED GaALAs Infrared Emitter
|
TOREX SEMICONDUCTOR LTD.
Toshiba Semiconductor
|
| TLP831 |
PHOTO-INTERRUPTER INFRARED LED PHOTOTRANSISTOR
PHOTOINTERRUPTER INFRARED LED PHOTOTRANSISTOR
|
Toshiba Semiconductor
|
| TLN201 |
INFRARED LED GAA AS INFRARED ENITTER
|
Toshiba Corporation
Toshiba Semiconductor
|
| TLN208 |
LED LAMP GaAlAs INFRARED EMITTER
INFRARED LIGHT - EMISSION DIODE FOR STILL CAMERA LIGHT SOURCE FOR AUTO FOCUS
|
Toshiba Semiconductor
Toshiba Corporation
|
