| PART |
Description |
Maker |
| ISL210070712 ISL21007 ISL21007BFB812Z ISL21007BFB8 |
Precision, Low Noise FGA?Voltage References
Precision, Low Noise FGA?⒅oltage References
Precision, Low Noise FGA⑩Voltage References
Precision, Low Noise FGA™ Voltage References; Temperature Range: Full-Range Ind; Package: 8-SOIC T&R 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 1.25 V, PDSO8
|
Intersil Corporation
Intersil, Corp.
|
| OP-37AJ OP-37AZ OP-37BJ OP-37BZ OP-37CJ OP-37CZ OP |
LOW NOISE, PRECISION, HIGH SPEED OPERATIONAL AMPLIFIER(AVCL>=5)
703.02 Kbytes
LOW NOISE, PRECISION, HIGH SPEED OPERATIONAL AMPLIFIER(AVCL>=5)
LOW NOISE, PRECISION, HIGH SPEED OPERATIONAL AMPLIFIER(AVCL>=5) OP-AMP, 200 uV OFFSET-MAX, 63 MHz BAND WIDTH, CQCC20
|
AD[Analog Devices]
Analog Devices, Inc.
|
| K4S64323LF-DG_S15 K4S64323LF-DG_S1H K4S64323LF-DG_ |
2M X 32 SYNCHRONOUS DRAM, 9 ns, PBGA90
2Mx32 Mobile SDRAM 90FBGA 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-SOIC -55 to 125
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 8-CDIP -55 to 125
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 20-LCCC -55 to 125
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-PDIP -55 to 125
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| ISL6566CR ISL6566IR ISL6566CRZ |
Single Output LDO, 500mA, Adj. (1.3 to 6.5V), Low Noise 8-SOIC -40 to 125
Dual Low-Noise Wide-Bandwidth Precision Amplifier 8-TSSOP -40 to 85
|
Intersil Corporation
|
| LT1723 LT1722 LT1724 LT1722CS5 LT1722IS5 LT1722IS8 |
Single, Dual, Quad 200MHz Low Noise Precision Op Amps
Single 200MHz Low Noise Precision Op Amp
Dual 200MHz Low Noise Precision Op Amp
|
LINER[Linear Technology]
|
| ISL21060BFH620Z-TK ISL21060BFH625Z-TK ISL21060BFH6 |
Precision Reference with Disable
Precision, Low Noise FGA Voltage References
|
Intersil Corporation
|
| K4S643232C-TC/L80 K4S643232C-TC/L10 K4S643232C-TC/ |
ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External Components- Fully Encapsulated- Efficiency to 70%
Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 14-SOIC 200万32内存12k × 32 × 4银行同步DRAM LVTTL
Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 8-CDIP -55 to 125 200万32内存12k × 32 × 4银行同步DRAM LVTTL
ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External Components- Fully Encapsulated- Efficiency to 70%
Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-PDIP -40 to 85
Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC -40 to 85
Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 14-SOIC
Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 20-LCCC -55 to 125
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| AD8672ARM-R2 AD8672ARMZ-R2 AD8672ARMZ-REEL AD8674A |
Dual Precision Very Low Noise, Low Input Bias Current Operational Amplifier
Quad Precision Very Low Noise, Low Input Bias Current, Operational Amplifier
|
Analog Devices
|
| LT1037 LT1037ACH LT1037ACJ8 LT1037ACN8 LT1037AMH L |
Low Noise/ High Speed Precision Operational Amplifiers
Low Noise, High Speed Precision Operational Amplifiers
From old datasheet system
|
LINER[Linear Technology]
|
| LT102801 LT1028ACH LT1028ACJ8 LT1028ACN8 LT1028AMH |
Ultra Low Noise Precision High Speed Op Amps; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to 70°C OP-AMP, 80 uV OFFSET-MAX, 75 MHz BAND WIDTH, PDIP8
Ultralow Noise Precision High Speed Op Amps
|
Linear Technology, Corp.
|
