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KMM5364005BSWG - 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V

KMM5364005BSWG_3064594.PDF Datasheet


Part No.	KMM5364005BSWG
Description	4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
File Size	389.50K / 19 Page
Maker	SAMSUNG SEMICONDUCTOR CO. LTD.
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Related Part Number

PART	Description	Maker
KMM5364005BSWG	4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V	SAMSUNG SEMICONDUCTOR CO. LTD.
HY51V65173HGJT	4Mx16\|3.3V\|4K\|6\|FP/EDO DRAM - 64M 4Mx16 \| 3.3 \| 4K的\| 6 \|计划生育/ EDO公司的DRAM - 6400	Citizen Finetech Miyota
KMM5324004BSW	4MBx32 DRAM Simm Using 4MBx16	Samsung Semiconductor
KMM5364005BSW	4M x 36 DRAM SIMM(4M x 36 动RAM模块) 4米36的DRAM上海药物研究所米36动态内存模块）	Samsung Semiconductor Co., Ltd.
KMM5324104CKG KMM5324104CK KMM5324004CK KMM5324004	4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V	SAMSUNG[Samsung semiconductor]
KMM5322200C2W	2MBx32 DRAM Simm Using 1MBx16	Samsung Semiconductor
KMM5362003 KMM5362003G	2M x 36 DRAM SIMM Memory Module	Samsung Electronics
KMM53232004CK	32MBx32 DRAM Simm Using 16MBx4	Samsung Semiconductor
KMM5328004CSW	8MB X 32 DRAM Simm Using 4MB X 16	Samsung Semiconductor
KMM53616004CK	16MBx36 DRAM Simm Using 16MBx4 & 16MBx1	Samsung Semiconductor
KMM5321204C2W KMM5321204C2WG	1Mx32 DRAM SIMM (1MX16 Base)	Samsung semiconductor

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