| PART |
Description |
Maker |
| CS5520-BS |
16BIT/20-BIT BRIDGE TRANSDUCER A/D CONVERTER
|
ETC
|
| AD22055N AD22055R AD22055-15 AD22055 |
Single Supply Bridge Transducer Amplifier
Single Supply Bridge Transducer Amplifier INSTRUMENTATION AMPLIFIER, 1000 uV OFFSET-MAX, 0.03 MHz BAND WIDTH, PDSO8
|
Analog Devices, Inc.
|
| CS5506-BSZ CS5508-BSZ |
VERY LOW POWER 16BIT AND 20 BIT A/D CONVERTERS
|
Cirrus Logic, Inc.
|
| KM416S4030C KM416S4030CT-F10 KM416S4030CT-F7 KM416 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz
1M x 16Bit x 4 Banks Synchronous DRAM 100万16 × 4银行同步DRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K4S641632C K4S641632C-TC_L70 K4S641632C-TC_L80 K4S |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz
1M x 16Bit x 4 Banks Synchronous DRAM
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 166MHz
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HY51VS18163HG HY51V18163HGT-6 HY51V18163HGJ HY51V1 |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power
1M x 16Bit EDO DRAM 100万16 EDO公司的DRAM
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 50 ns, PDSO44
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 60 ns, PDSO44
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor, Inc.
|
| 1KAB20E 1KAB100E 1KAB80E 1KAB-E 1KAB10E 1KAB40E 1K |
200V Bridge in a D-38 package
50V Bridge in a D-38 package
1000V Bridge in a D-38 package
100V Bridge in a D-38 package
400V Bridge in a D-38 package
600V Bridge in a D-38 package
800V Bridge in a D-38 package
1.2 amp rectifier bridge
|
http://
IRF[International Rectifier]
|
| KBPC810 KBPC8005 KBPC801 KBPC802 KBPC804 KBPC806 K |
1000V Bridge in a D-72 package
50V Bridge in a D-72 package
100V Bridge in a D-72 package
200V Bridge in a D-72 package
400V Bridge in a D-72 package
600V Bridge in a D-72 package
800V Bridge in a D-72 package
|
International Rectifier
|
| HY57V641620HGT-6I HY57V641620HGT-7I HY57V641620HGT |
SDRAM - 64Mb
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54
x16 SDRAM x16内存
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN
Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:MLCC; Dielectric Material:Ceramic; Leaded Process Compatible:Yes
CAP SMD 0805 .01UF 50V 5%
CONNECTOR ACCESSORY
From old datasheet system
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| CS5508 CS5506 CS5507 CS5505 CS5505-AP CS5505-AS CS |
Very low-power, 16/20-bit A/D conveter
VERY LOW POWER 16BIT AND 20 BIT A/D CONVERTERS
Very-Low-Power, 16-Bit/20-Bit A/D Converters
|
ETC
Cirrus Logic
CRYSTAL
|
