| PART |
Description |
Maker |
| AS4C4M4F1Q-50TC AS4C4M4F1Q-60TC AS4C4M4F1Q-60JC |
DRAM|FAST PAGE|4MX4|CMOS|SOJ|28PIN|PLASTIC
DRAM|FAST PAGE|4MX4|CMOS|TSOP|28PIN|PLASTIC
4M X 4 FAST PAGE DRAM, 60 ns, PDSO28
|
ALLIANCE SEMICONDUCTOR CORP
|
| AS4C4M4F0-50JC AS4C4M4F0-50JI AS4C4M4F0-50TC AS4C4 |
x4 Fast Page Mode DRAM
5V 4M x 4 CMOS DRAM (Fast Page mode) 5V米4的CMOS的DRAM（快速页模式
|
Alliance Semiconductor, Corp.
|
| TC514280BZLL-70 TC5116440BSJ-70 TC5116105BSJ-60 TC |
256K X 18 FAST PAGE DRAM, 70 ns, PZIP40 ZIP-40
4M X 4 OTHER DRAM, 70 ns, PDSO26
16M X 1 EDO DRAM, 60 ns, PDSO24
4M X 4 OTHER DRAM, 50 ns, PDSO26
16K X 4 CACHE SRAM, 10 ns, PDIP24
|
SIEMENS AG
|
| KM44C256D KM44C256D-6 KM44C256D-7 KM44C256D-8 |
256k x 4Bit CMOS DRAM with Fast Page Mode
256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode 256 × 4位CMOS动态随机存储器的快速页面模
|
Samsung Electronics
Samsung Semiconductor Co., Ltd.
|
| MB85326 |
CMOS 4M x 36 Fast Page Mode DRAM Module
|
Fujitsu
|
| NN514256 |
Fast Page Mode CMOS 256k x 4 Bit DRAM
|
NPN
|
| KM44C4103C KM44C4003C KM44C4003CK-6 KM44C4003CKL-6 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| V53C400 |
High Performance / Low Power 4M x 1-Bit Fast Page Mode CMOS DRAM
|
Vitelic
|
| V53C404 |
High Performance / Low Power 1M x 4-Bit Fast Page Mode CMOS DRAM
|
Vitelic
|
| V53C466Z V53C466J |
High Performance / Low Power 64K x 4-Bit Fast Page Mode CMOS DRAM
|
Vitelic
|
| PSC4039 PSC-4039 |
From old datasheet system
PA/PAG PACKAGE OUTLINE 6.10MM BODY WIDTH TTSOP .50MM PITCH 尼龙/封装外形6.10MM导水管周围灰质，机身宽度TTSOP 0.50 mm间距
|
Integrated Device Technolog...
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
