| PART |
Description |
Maker |
| ITH08F06G ITH08F06 ITH08F06B |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-252AA
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-220AB
HIGH - SPEED POWERLINE N - CHANNEL IGBT
|
MITEL[Mitel Networks Corporation]
|
| IXGH24N50BS IXGH24N60BS |
TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 48A I(C) | TO-247SMD
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 48A I(C) | TO-247SMD 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 48A条一（c）|47SMD
|
IXYS, Corp.
|
| IRG4CC81KB IRG4CC40RB |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | CHIP 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展|芯片
IRG4CC81KB IGBT Die in Wafer Form
|
International Rectifier
|
| IRGC100B120UB |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | CHIP 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展|芯片
|
Belden, Inc.
|
| F400R06KF |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 400A I(C) | MODULE-S 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展|四楼一（c）|模块
|
Thomas
|
| HGT1S1N120CNDS9A |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 6.2A I(C) | TO-263AB 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 6.2AI（丙）|63AB
|
Intersil, Corp.
|
| IXGA15N120C |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 30A I(C) | TO-263AA 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 30A条一（c）|63AA
|
IXYS, Corp.
|
| FF300R12KF2 |
TRANSISTOR | IGBT | N-CHAN | DUAL | 1.2KV V(BR)CES | 300A I(C) | M:HL093HW060 晶体管| IGBT的|正陈|双| 1.2KV五（巴西）国际消费电子展| 300一（c）|米：HL093HW060
|
Infineon Technologies AG
|
| FF75R12KF |
TRANSISTOR | IGBT | N-CHAN | DUAL | 1.2KV V(BR)CES | 75A I(C) | M:HL093HD5.6 晶体管| IGBT的|正陈|双| 1.2KV五（巴西）国际消费电子展| 75A条一（c）|米：HL093HD5.6
|
Infineon Technologies AG
|
| GT5J331_SM GT5J311 GT5J331SM GT5J311SM |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 5A I(C) | TO-263AB
N CHANNEL IGBT(HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS)
N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
