PART |
Description |
Maker |
BC807U |
General Purpose Transistors - PNP Silicon AF Transistor Array for AF input stages and drivers PNP Silicon Transistor Array
|
INFINEON[Infineon Technologies AG]
|
OC70 OC75 OC66 2N217 OC74 OC65 OC73 OC76 OC77 OC78 |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 50MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 10MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 150MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 300MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 300MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 250MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 200MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 50MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 10V V(BR)CEO | 50MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 500MA I(C) | TO-5 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-5 TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 500MA I(C) | TO-5 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | TO-5 68HC11/Bidirectional-Compatible µP Reset Circuit TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 500MA I(C) | TO-5 晶体管|晶体管|进步党| 18V的五(巴西)总裁| 500mA的一(c)|
|
APEM SA
|
DDA114EU DDA114EU-7 DDA114TU DDA114TU-7 DDA114YU D |
PNP PRE-BIASED SMALL SIGNAL SOT-63 DUAL SURFACE MOUNT TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR CONN, 300 PIN PLUG, 0.05 X 0.05 IN. CENTERLINES, MEG-ARRAY, UL REQUIRED 30 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR CONN, PLUG, .050 IN, MEG-ARRAY, 300 X NPN PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR
|
Diodes, Inc. Diodes Inc. DIODES[Diodes Incorporated]
|
BA6254FS A5800959 BA6254 |
From old datasheet system PNP transistor array
|
ROHM[Rohm]
|
BCR48PN |
NPN/PNP Silicon Digital Transistor Array
|
Infineon Technologies A...
|
BCR22PN07 |
NPN/PNP Silicon Digital Transistor Array
|
Infineon Technologies AG
|
Q62702-C2373 BC857S BC857SQ62702C2373 |
TRANSISTOR SOT363 PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
SEMB13 |
PNP Silicon Digital Transistor Array Preliminary data
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
ADY27IV AL100 AL102 AL103 ASZ17 ASZ15 ASZ16 ASZ18 |
TRANSISTOR | BJT | PNP | 130V V(BR)CEO | 10A I(C) | TO-3 TRANSISTOR | BJT | PNP | 130V V(BR)CEO | 6A I(C) | TO-3 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 8A I(C) | TO-3 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 8A I(C) | TO-3 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 10A I(C) | TO-3 TRANSISTOR | BJT | PNP | 26V V(BR)CEO | 4A I(C) | TO-66VAR TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 600MA I(C) | TO-8 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | TO-8 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 600MA I(C) | TO-8 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 4A I(C) | TO-3 TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 20A I(C) TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 6A I(C) | TO-3 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 6A I(C) | TO-3 TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 6A I(C) | TO-3 TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 3A I(C) | TO-3 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 3.5A I(C) | TO-3 晶体管|晶体管|进步党| 30V的五(巴西)总裁| 3.5AI(丙)| TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-3 晶体管|晶体管|进步党| 60V的五(巴西)总裁| 3A条一c)| TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 10A I(C) | TO-41 晶体管|晶体管|进步党| 45V的五(巴西)总裁| 10A条一(c)|1 TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 8A I(C) | TO-8 晶体管|晶体管|进步党| 45V的五(巴西)总裁| 8A条一(c)| TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 3A I(C) | TO-3 晶体管|晶体管|进步党| 45V的五(巴西)总裁| 3A条一(c)| TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 25A I(C) 晶体管|晶体管|进步党| 60V的五(巴西)总裁|5A一(c
|
Cypress Semiconductor, Corp. Vicor, Corp. Atmel, Corp. Advanced Analogic Technologies, Inc. EPCOS AG
|
SMBTA06UPN SMBTA06UPN07 |
NPN / PNP Silicon AF Transistor Array High breakdown voltage
|
Infineon Technologies AG
|