| PART |
Description |
Maker |
| DS1870 DS1870E-010 |
LDMOS RF Power-Amplifier Bias Controller
|
MAXIM[Maxim Integrated Products]
|
| DS187006 |
LDMOS RF Power-Amplifier Bias Controller
|
Maxim Integrated Products
|
| MW4IC001MR4 MW4IC001MR406 |
RF LDMOS Wideband Integrated Power Amplifier
800??170 MHz, 900 mW, 28 V W??DMA RF LDMOS Wideband Integrated Power Amplifier
|
Freescale Semiconductor, Inc
MOTOROLA
|
| MHVIC2115R2 |
MHVIC2115R2 2.2 GHz, 26 V, 23/34 dBm W-CDMA RF LDMOS Integrated Circuit
RF LDMOS Wideband Integrated Power Amplifier
|
MOTOROLA[Motorola, Inc]
|
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| MW4IC2020 MW4IC2020D MW4IC2020GMBR1 MW4IC2020MBR1 |
GSM/GSM EDGE, CDMA 1.805–1.99 GHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifier
MW4IC2020MBR1, MW4IC2020GMBR1 GSM/GSM EDGE, CDMA, 1805-1990 MHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers
RF LDMOS Wideband Integrated Power Amplifiers
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| MHV5IC2215NR2 |
RF LDMOS Wideband Integrated Power Amplifier
|
FREESCALE[Freescale Semiconductor, Inc]
|
| MW6IC1940GNBR1 |
RF LDMOS Wideband Integrated Power Amplifier
|
Freescale Semiconductor, Inc
|
| MHVIC2114R2 |
RF LDMOS Wideband Integrated Power Amplifier
|
Freescale Semiconductor, Inc
|
| NE55410GR NE55410GR-T3-AZ |
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
NEC
|
| PTMA080304M |
Dual Wideband RF LDMOS Power Amplifier 30 W, 700-1000 MHz
|
Infineon Technologies AG
|
| PTMA180402M |
Wideband RF LDMOS Integrated Power Amplifier 40 W, 28 V, 1800 ?2100 MHz
|
Cree, Inc
|
