| PART |
Description |
Maker |
| MTH8N50E |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
|
MOTOROLA[Motorola, Inc]
|
| MTB4N80E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MTB8N50E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MTB2N40E MTB2N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 400 VOLTS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTP3N60E_D ON2606 ON2605 MTP3N60E MTP3N60E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS
From old datasheet system
|
ON Semiconductor
Motorola, Inc.
|
| ZVN3310F ZVP3310F ZVP3310FTA ZVP3310F-15 |
SOT23 P-CHANNEL ENHANCEMENT SOT23 P-CHANNEL ENHANCEMENT
SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
|
Diodes Incorporated
|
| STM4437 |
P -Channel Enhancement Mode MOS FET
|
SamHop Microelectronics Corp.
|
| MRF171 |
N-Channel Enhancement Mode TMOS RF FET
|
ASI[Advanced Semiconductor]
|
| STT3423P |
P-Channel Enhancement Mode Mos.FET
|
SeCoS
|
| SMG2314NE |
N-Channel Enhancement Mode Mos.FET
|
SeCoS Halbleitertechnologie GmbH
|
| STT6405 |
P-Channel Enhancement Mode Mos.FET
|
SeCoS Halbleitertechnologie GmbH
|
