| PART |
Description |
Maker |
| VG3617161ET-8 VG3617161ET-7 |
CMOS Synchronous Dynamic RAM 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
|
Vanguard International Semiconductor Corporation
Vanguard International Semiconductor, Corp.
|
| PDPD431636L |
1M-Bit CMOS Synchronous Fast Static RAM(1M CMOS 同步快速静态RAM) 100万位CMOS同步快速静态RAM100万的CMOS同步快速静态内存）
|
NEC, Corp.
|
| MB8501S064AC-100 MB8501S064AC-67 MB8501S064AC-84 |
CMOS 1M×64 Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 1M×64同步动态RAM)
|
Fujitsu Limited
|
| MB8504S064AC-100 MB8504S064AC-84 MB8504S064AC-67 |
CMOS 4M×64 Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4M×64位同步动态RAM)
|
Fujitsu Limited
|
| MB8501S064AD-100 |
CMOS 1M×64Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 1M×64位同步动态RAM)
|
Fujitsu Limited
|
| MB8501S064AE-100 MB8501S064AE-84 MB8501S064AE-67 |
CMOS 1M×64Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 1M×64同步动态RAM)
|
Fujitsu Limited
|
| FM93C66A FM93C66AE FM93C66AV 93C66 FM93C66AL |
4K-Bit Serial CMOS EEPROM (MICROWIRE⑩ Synchronous Bus)
4K-Bit Serial CMOS EEPROM (MICROWIRE Synchronous Bus)
From old datasheet system
4K-Bit Serial CMOS EEPROM (MICROWIRE?/a> Synchronous Bus)
|
FAIRCHILD[Fairchild Semiconductor]
|
| K4S561632C-TC75 K4S561632C K4S561632C-L1H K4S56163 |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM
|
Samsung semiconductor
|
| MB85396A-60 MB85396A-70 |
CMOS 4M×36Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4M×36同步动态RAM) 4米36Bit的CMOS同步动态随机存取存储器（SDRAM）的CMOS分36位同步动态RAM）的
|
Fujitsu, Ltd.
|
| HYS72V8200GR-8-E HYS72V16200GR-8-E HYS72V16201GR-8 |
16M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
内存| 32MX72 |CMOS |内存| 168线|塑料
SDRAM|16MX72|CMOS|DIMM|168PIN|PLASTIC
SDRAM|8MX72|CMOS|DIMM|168PIN|PLASTIC
|
INFINEON TECHNOLOGIES AG
|
| VG36641641DT VG36641641DT-6 VG36641641DT-7 VG36641 |
CMOS Synchronous Dynamic RAM
|
ETC[ETC]
VML[Vanguard International Semiconductor]
|
