| PART |
Description |
Maker |
| M87C257-20C1TR M87C257-20C3TR M87C257-20C6TR M87C2 |
Address Latched 256 Kbit (32Kb x8) UV EPROM and OTP EPROM
|
STMicroelectronics
|
| M27V256 M27V256-100B1TR M27V256-100B6TR M27V256-10 |
NND - 256 KBIT (32KB X8) LOW VOLTAGE UV EPROM AND OTP EPROM
2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM
256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM
256 Kbit (32Kb x 8) Low Voltage UV EPROM and OTP EPROM
From old datasheet system
2.5-V/3.3-V 16-Bit Edge-Triggered D-Type Flip-Flops With 3-State Outputs 48-SSOP -40 to 85
2.5-V/3.3-V 16-Bit Edge-Triggered D-Type Flip-Flops With 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85
2.5-V/3.3-V 16-Bit Transparent D-Type Latches With 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85
2.5-V/3.3-V 18-Bit Universal Bus Transceiver With 3-State Outputs 56-SSOP -40 to 85
2.5-V/3.3-V 16-Bit Edge-Triggered D-Type Flip-Flops With 3-State Outputs 48-TSSOP -40 to 85 256千位2KB × 8低压紫外线可擦写可编程只读存储器和OTP存储
|
SGS Thomson Microelectronics
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| M48Z58 M48Z58-70MH1 M48Z58-70MH1TR M48Z58-70MH6 M4 |
64 Kbit 8Kb x 8 ZEROPOWER SRAM 64千位kB × 8 ZEROPOWER的SRAM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M27W400 M27W400-100B6TR M27W400-100F6TR M27W400-10 |
4 Mbit (512Kb x8 or 256Kb x16), Low Voltage UV EPROM and OTP EPROM
512K X 8 UVPROM, 100 ns, CDIP40
4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16低压紫外线可擦写可编程只读存储器和OTP存储
256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M27V800-150XM1TR M27V800 M27V800-100B1TR M27V800-1 |
NND - 8 MBIT (1MB X8 OR 512KB X16) LOW VOLTAGE UV EPROM AND OTP EPROM
8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM 8兆x812KB的x16低压紫外线可擦写可编程只读存储器和OTP存储
512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| UN2124 UNR2124 UN2121 UNR2121 UN212Y UN2122 UNR212 |
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE® serial access EEPROM
Transistors with built-in Resistor
|
Matsshita / Panasonic
|
| UL1401 |
Wzmacniacz mocy m.cz.
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE® serial access EEPROM
|
Ultra CEMI
|
| UL1201 |
Wzmacniacz p.cz.
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE® serial access EEPROM
|
Ultra CEMI
|
| M27V512 M27V512-100B1TR M27V512-100B6TR M27V512-10 |
Programmable Logic Controller; For Use With:MicroSmart series PLCs; Supply Voltage:24VDC 512千位64Kb的x8低压紫外线EPROM和检察官办公室存储器
Quadruple 2-Input Positive-NAND Buffers/Drivers 14-PDIP 0 to 70 512千位64Kb的x8低压紫外线EPROM和检察官办公室存储器
512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM 512千位64Kb的x8低压紫外线EPROM和检察官办公室存储器
|
STMicroelectronics N.V.
Hitachi,Ltd.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M27C256B-12XF1 |
256 Kbit (32Kb x 8) EPROM, 5V, 120ns
|
SGS Thomson Microelectronics
|
| M27W512 |
512 KBIT (64KB X8) LOW VOLTAGE OTP EPROM
|
ST Microelectronics
|
