| PART |
Description |
Maker |
| IDT72V70180PF |
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 128 x 128 3.3V Power Supply
|
Integrated Device Technology
|
| EDI9F416128C-BN EDI9F416128C85BNC |
85ns; 5V power supply; 4 x 128K x 16 static RAM CMOS module
Differential Receiver/Equalizer; Temperature Range: -40°C to 85°C; Package: 16-QSOP T&R
|
White Electronic Designs
|
| IDT72V8981 IDT72V8981DB IDT72V8981J IDT72V8981J8 7 |
From old datasheet system
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 128 x 128
128 x 128 TSI, 4 I/O at 2Mbps, Variable Delay, 3.3V
|
Integrated Device Technology
IDT
|
| HYE25L128160AC-8 HYB25L128160AC-75 |
128-MBIT SYNCHRONOUS LOW-POWER DRAM IN CHIPSIZE PACKAGES 128 - Mbit同步低功率DRAMCHIPSIZE套票
|
Infineon Technologies A...
Infineon Technologies AG
|
| M39P0R9070E0ZADF M39P0R9070E0 M39P0R9070E0ZAD M39P |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package
|
STMICROELECTRONICS[STMicroelectronics]
|
| IS62LV1216BLL |
128 K x 16 Low Voltage, Ultra Low Power CMOS SRAM(128 K x 16 低压，极低功耗CMOS静态RAM)
|
Integrated Silicon Solution, Inc.
|
| M58WR128FB M58WR128FB60ZB6F |
128 Mbit (8Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
|
ST Microelectronics
|
| M58LT128HSB M58LT128HSB8ZA6 M58LT128HSB8ZA6E M58LT |
128 Mbit (8 Mb ×16, multiple bank, multilevel interface, burst) 1.8 V supply, secure Flash memories
|
Numonyx B.V
|
| M58LT128HSB M58LT128HST M58LT128HST8ZA6E M58LT128H |
128-Mbit (8 Mb ×16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply, Secure Flash memories
|
STMicroelectronics
|
| M58LW128BZA M58LW128A M58LW128A150N1E M58LW128A150 |
128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| M58LR128GT85ZB5 M58LR128GB M58LR128GB85ZB5 M58LR12 |
128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
|
STMicroelectronics
|
