| PART |
Description |
Maker |
| CE1A3Q CE1A3Q-T CE1A3Q-T-A |
2000 mA, 70 V, NPN, Si, SMALL SIGNAL TRANSISTOR
COMPOUND TRANSISTOR
Hybrid transistor
TRANS DIGITAL BJT NPN 70V 2000MA 3SP-8 T/R
|
NEC Corp.
NEC[NEC]
NEC Electronics
|
| FZT692B-15 |
70V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN SOT223
|
Diodes Incorporated
|
| DTB113E DTA114E DTA114T DTA114Y DTA123E DTA124E DT |
TVS 1500W 70V BIDIRECT SMC
PNP SILICON BIAS RESISTOR TRANSISTOR
|
ONSEMI[ON Semiconductor]
|
| CSD362 CSD362N CSD362O CSD362R |
40.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 5.000A Ic, 40 - 80 hFE.
40.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 5.000A Ic, 70 - 140 hFE.
40.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 5.000A Ic, 20 - 140 hFE.
40.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 5.000A Ic, 20 - 50 hFE.
NPN PLASTIC POWER TRANSISTOR
|
Continental Device India Limited
Powerex Power Semiconductors
|
| CIL351 |
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 200MA I(C) | TO-18 晶体管|晶体管|叩| 70V的五（巴西）总裁| 200mA的一（c）|18
|
Cirrus Logic, Inc.
|
| PH1214-25L PHI214-25L |
Radar Pulsed Power Transistor, 25W, 300us Pulse, 10% Duty 1.2 - 1.4 GHz
Radar Pulsed Power Transistor, 25W, 300ms Pulse, 10% Duty 1.2 - 1.4 GHz
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 1.6A I(C) | FO-41BVAR
|
Tyco Electronics
|
| 2N1080 2N5409 2N2202 2N4350 2N4242 2N3142 2N3141 2 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-53
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 5A I(C) | TO-111
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 70V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | NPN | 65V V(BR)CEO | 2A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 65V V(BR)CEO | 2A I(C) | STR-10
68HC11/Bidirectional-Compatible µP Reset Circuit
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 5A I(C) | TO-36
Open-Drain SOT µP Reset Circuit
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | CAN
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-53
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 5A I(C) | TO-5
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-210AC
晶体管|晶体管|进步党| 60V的五（巴西）总裁| 60mA的一（c）|1
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 350MA I(C) | TO-5 晶体管|晶体管|叩| 40V的五（巴西）总裁| 350mA的一（c）|
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 10A I(C) | STR-1/4 晶体管|晶体管|叩| 50V五（巴西）总裁| 10A条一（c）|个STR - 1 / 4
Open-Drain SOT µP Reset Circuit
|
Winbond Electronics, Corp.
|
| D40C4 D45D2 D45D4 D45D6 D40C7 D40K4 D44D5 |
TRANSISTOR | BJT | DARLINGTON | NPN | 40V V(BR)CEO | 500MA I(C) | TO-202AC
TRANSISTOR | BJT | DARLINGTON | PNP | 50V V(BR)CEO | 6A I(C) | TO-220AB
TRANSISTOR | BJT | DARLINGTON | PNP | 70V V(BR)CEO | 6A I(C) | TO-220AB
TRANSISTOR | BJT | DARLINGTON | PNP | 90V V(BR)CEO | 6A I(C) | TO-220AB
TRANSISTOR | BJT | DARLINGTON | NPN | 50V V(BR)CEO | 500MA I(C) | TO-202
TRANSISTOR | BJT | DARLINGTON | NPN | 50V V(BR)CEO | 2A I(C) | TO-202AC
TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 6A I(C) | TO-220AB 晶体管|晶体管|达林顿|叩| 80V的五（巴西）总裁| 6A条一（c）| TO - 220AB现有
|
Vishay Intertechnology, Inc.
|
| BAS70SV |
70V Dual Schottky Barrier Diodes
|
Fairchild Semiconductor
|
| ZXMN7A11K ZXMN7A11KTC |
70V N-channel enhancement mode MOSFET
|
Diodes Incorporated
|
| ZXMP7A17KTC |
70V P-channel enhancement mode MOSFET
|
Diodes Incorporated
|
