| PART |
Description |
Maker |
| MGFK36V4045 |
RECTIFIER SCHOTTKY SINGLE 2A 100V 50A-Ifsm 0.79Vf 0.5A-IR SMB 3K/REEL
14.0-14.5GHz BAND 4W INTERNALLY MATCHED GaAs FET
14.0-14.5 GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFC45V5964A C455964A1 |
5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.9~6.4GHz BAND 32W INTERNALLY MATCHD GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFS45V2325A |
2.3 - 2.5GHz BAND 32W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带2W国内MATCHD砷化镓场效应
2.3-2.5 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| RMPA2451 RMPA2451-TB |
2.42.5 GHz GaAs MMIC Power Amplifier
2.4-2.5 GHz GaAs MMIC Power Amplifier
ISM Band PA (Partially Matched)
|
Fairchild Semiconductor Corporation
|
| MGFK38V2732 |
12.7-13.2 GHz BAND 6W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC36V7785A |
7.7-8.5 GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFK25V4045 |
14.0-14.5 GHz BAND 0.3W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFK33V4045 |
14.0-14.5 GHz BAND 2W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC39V4450A |
4.4-5.0 GHz Band 8W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC40V5964A |
5.9-6.4 GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| XP1022-QF-0N00 XP1022-QF-EV1 |
17.0-25.0 GHz GaAs MMIC Power Amplifier, QFN 17000 MHz - 25000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
17.0-25.0 GHz GaAs MMIC Power Amplifier, QFN 17.0-25.0千兆赫的GaAs MMIC功率放大器，QFN封装
|
Mimix Broadband, Inc.
|
