| PART |
Description |
Maker |
| BAS516 |
High Spee d Switching Diode
|
Chendahang Electronics ...
|
| AS7C33256PFS18A-166TQI AS7C33256PFS16A AS7C33256PF |
3.3V 256K x 16/18 pipeline burst synchronous SRAM
3.3V 256K×18 Ppipeline Burst Synchronous SRAM(3.3V 256K×18流水线脉冲同步静态RAM) 3.3 256K × 18 Ppipeline突发同步SRAM的电压（3.3V 256K × 18流水线脉冲同步静态内存）
3.3V 256K 】 16/18 pipeline burst synchronous SRAM
3.3V 256K x 16 pipeline burst synchronous SRAM, clock speed - 133MHz
3.3V 256K × 16/18 pipeline burst synchronous SRAM
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor ...
|
| A29002V-100 A29002-70 A29002L-70 A29002V-70 A29002 |
110ns 20mA 256K x 8bit CMOS 5.0V-only
70ns 20mA 256K x 8bit CMOS 5.0V-only
100ns 20mA 256K x 8bit CMOS 5.0V-only
120ns 20mA 256K x 8bit CMOS 5.0V-only
150ns 20mA 256K x 8bit CMOS 5.0V-only
90ns 20mA 256K x 8bit CMOS 5.0V-only
55ns 20mA 256K x 8bit CMOS 5.0V-only
|
AMIC Technology
|
| M27C400206 M27C4002-90XN6TR M27C4002 M27C4002-10B1 |
4 Mbit (256Kb x16) UV EPROM and OTP EPROM
256K X 16 UVPROM, 70 ns, CDIP40
256K X 16 OTPROM, 150 ns, PQCC44
256K X 16 OTPROM, 200 ns, PDIP40
256K X 16 UVPROM, 150 ns, CDIP40
256K X 16 OTPROM, 120 ns, PQCC44
|
STMICROELECTRONICS[STMicroelectronics]
|
| HYB514171BJ-50- Q67100-Q727 Q67100-Q2021 HYB514171 |
256k x 16-Bit Dynamic RAM
256k × 16-Bit Dynamic RAM(256k × 16动RAM) 256k × 16位动态随机存储器56k × 16位动态内存）
|
SIEMENS AG
|
| M68AW256ML70ZB6 M68AW256ML55ND1 M68AW256ML55ND1E M |
4 Mbit (256K x16) 3.0V Asynchronous SRAM 4兆位56K × 16.0V异步SRAM
256K X 16 STANDARD SRAM, 55 ns, PDSO44
256K X 16 STANDARD SRAM, 70 ns, PBGA48
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| GS880V37AT-200I GS880V37AT-250 GS880V37AT-250I GS8 |
256K x 36 9Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 3 ns, PQFP100
|
GSI Technology, Inc.
GSI[GSI Technology]
|
| W27L02 W27L02P-70 W27L02P-90 W27L02Q-70 W27L02Q-90 |
256K X 8 ELECTRIC ALLY ERASABLE EPROM 256K X 8 EEPROM 12V, 70 ns, PQCC32
|
Winbond Electronics, Corp.
Winbond Electronics Corp
WINBOND[Winbond]
|
| 27C4096-12 27C4096-10 |
4M-BIT [512K x 8/256K x 16] CMOS EPROM 4分位[12k × 8/256K × 16]的CMOS存储
|
Macronix International Co., Ltd.
|
| CY62146ELL-45ZSXA CY62146ELL-45ZSXI |
4-Mbit (256K x 16) Static RAM 256K X 16 STANDARD SRAM, 45 ns, PDSO44
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| T15V2M08A-70P T15V2M08A T15V2M08A-100C T15V2M08A-5 |
256K X 8 LOW POWER CMOS STATIC RAM 256K × 8低功耗CMOS静态RAM
|
Taiwan Memory Technolog...
TMT[Taiwan Memory Technology]
TM Technology, Inc.
|
| GS816273CGC-250V GS816273CC-250IV |
256K x 72 18Mb S/DCD Sync Burst SRAMs 256K X 72 CACHE SRAM, 2.5 ns, PBGA209
|
GSI Technology, Inc.
|
