| PART |
Description |
Maker |
| AMG-PP130 |
FACT SHEET
|
alpha microelectronics ...
|
| AMG-PS131 |
FACT SHEET
|
alpha microelectronics gmbh
|
| 0638238375 |
Application Tooling Specification Sheet
|
Molex Electronics Ltd.
|
| 0638235175 |
Application Tooling Specification Sheet
|
Molex Electronics Ltd.
|
| 35748-0110 35748-0111 63600-0520 35747-0110 63819- |
Application Tooling Specification Sheet
|
Molex Electronics Ltd.
|
| 0638027600 |
Application Tooling Specification Sheet
|
Molex Electronics Ltd.
|
| 300042 314994-1 314995-1 314996-1 |
This instruction sheet covers the application and maintenance procedures for Pneumatic Crimping Head Assembly
|
Tyco Electronics
|
| K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.
K4R271669B:Direct RDRAMData Sheet
256K x 16/18 bit x 32s banks Direct RDRAMTM
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K1S321615M K1S321615M-E K1S321615M-EE10 |
2M x 16 bit Uni-Transistor CMOS RAM Data Sheet
2Mx16 bit Uni-Transistor Random Access Memory
|
Samsung Electronic
Samsung semiconductor
|
| LXT386LE LXT386 LXT386BE |
Networking & Communications - Broadband & Access Products - te Carrier Access Components T1/E1 - Intel LXT386 Quad T1/E1/J1 Transceiver
|
Intel Corporation
|
