
	Part Number	Hot Search : FQU4P40 DKF20310 ARSL251 ARSL251 XVT9001 TYN810 S1300 MJE12007
	Product Description
	Full Text Search

BLF578XR - Product descriptionA 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band. Power LDMOS transistor BLF578XR<SOT539A (SOT539A)|<<http://www.nxp.com/packages/SOT539A.html<1<Always Pb-free,;

BLF578XR_2813803.PDF Datasheet

Part No.

BLF578XR

Description

Product descriptionA 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.
Power LDMOS transistor BLF578XR<SOT539A (SOT539A)|<<http://www.nxp.com/packages/SOT539A.html<1<Always Pb-free,;

File Size

67.42K / 8 Page

Maker

NXP Semiconductors N.V.

JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: BLF521

Maker: PHILIPS

Pack:

Stock: Reserved

Unit price for :

50: $9.69

100: $9.21

1000: $8.72

Email: oulindz@gmail.com

Contact us

Homepage

Download

[ BLF578XR Datasheet PDF Downlaod from IC-ON-LINE.CN

]
[ BLF578XR Datasheet PDF Downlaod from Datasheet.HK

]
[BLF578XR Datasheet PDF Downlaod from Maxim4U.com

] :-)

[ View it Online ] [ Search more for BLF578XR ]

[ Price & Availability of BLF578XR by FindChips.com ]

Full text search : Product descriptionA 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band. Power LDMOS transistor BLF578XR<SOT539A (SOT539A)|<<http://www.nxp.com/packages/SOT539A.html<1<Always Pb-free,;

Product Description search : Product descriptionA 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band. Power LDMOS transistor BLF578XR<SOT539A (SOT539A)|<<http://www.nxp.com/packages/SOT539A.html<1<Always Pb-free,;

Related Part Number

PART	Description	Maker
0500DP44A1215	1200 /1200 MHz Diplexer (BPF/BRF)	Johanson Technology Inc.
APT25GT120BRG	Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: TO-247 [B]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 25; 54 A, 1200 V, N-CHANNEL IGBT, TO-247AA	Advanced Power Technology, Ltd.
APT35GN120L2DQ2 APT35GN120L2DQ2G	Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: 264 MAX [L2]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 46; 94 A, 1200 V, N-CHANNEL IGBT	Microsemi, Corp. Advanced Power Technology
DBU-25P-K87-F0	Brand: Cannon Product Category: D Sub Product Line: D Sub Series: D*U	ITT Industries
STTH6012 STTH6012W	60 A, 1200 V, SILICON, RECTIFIER DIODE, DO-247 Ultrafast recovery - 1200 V diode	STMicroelectronics
STTH1212G-TR STTH1212 STTH1212D STTH1212G	12 A, 1200 V, SILICON, RECTIFIER DIODE, TO-220AC Ultrafast recovery - 1200 V diode	STMicroelectronics
CM50TU-24F	Trench Gate Design Six IGBTMOD?/a> 50 Amperes/1200 Volts Trench Gate Design Six IGBTMOD⑩ 50 Amperes/1200 Volts Trench Gate Design Six IGBTMOD50 Amperes/1200 Volts 50 A, 1200 V, N-CHANNEL IGBT	POWEREX[Powerex Power Semiconductors] Powerex, Inc.
APT150GN120JDQ4	Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 1200; IC (A): 99; 215 A, 1200 V, N-CHANNEL IGBT Thunderbolt IGBT	Microsemi, Corp. Microsemi Corporation
STTH312B -STTH312B	Ultrafast recovery - 1200 V diode 3 A, 1200 V, SILICON, RECTIFIER DIODE	STMICROELECTRONICS
FF800R12KE3	Technische Information / technical information 1200 A, 1200 V, N-CHANNEL IGBT	INFINEON TECHNOLOGIES AG eupec GmbH
CD411230 CD411630	Dual Diode 30 Amperes/1200-1600 Volts Dual Diode POW-R-BLOK Modules(30 Amperes/1200-1600 Volts) 30 A, 1200 V, SILICON, RECTIFIER DIODE	Powerex Power Semicondu... POWEREX[Powerex Power Semiconductors] Powerex, Inc.

Related keyword From Full Text Search System

BLF578XR electric	BLF578XR Drain	BLF578XR dropout	BLF578XR quad op amp	BLF578XR ic中文资料网
BLF578XR performance	BLF578XR Test	BLF578XR Datasheet	BLF578XR Micropower	BLF578XR amplifier