| PART |
Description |
Maker |
| VN0606L |
TRANSISTOR 330 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA, TO-92, 3 PIN, FET General Purpose Small Signal
|
Vishay Siliconix
|
| BSS125 Q67000-S233 Q62702-S021 Q67000-S008 BSS125Q |
N-Channel SIPMOS Small-Signal Transistor
SIPMOS ? Small-Signal Transistor
16 Characters x 1 Lines, 5x7 Dot Matrix Character and Cursor
Transient Voltage Suppressor Diodes
SIPMOS Small-Signal Transistor (N channel Enhancement mode) SIPMOS小信号晶体管N通道增强模式
SIPMOS Small-Signal Transistor (N channel Enhancement mode) 100 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| MSAFZ15N40A MSAFX14N100A FSE1850 FSE1350 FSE1540 F |
N Channel MOSFET; Package: CoolPack1; trr (nsec): 120; t(on) (nsec): 180; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 300; BVDSS (V): 400; Rq: 0.4; VSD (V): 1.5 SMALL SIGNAL, FET
N Channel MOSFET; Package: CoolPack1; trr (nsec): 850; t(on) (nsec): 60; ID (A): 14; RDS(on) (Ohms): 0.82; PD (W): 310; BVDSS (V): 1000; Rq: 0.25; VGS(th) (V): 4; VSD (V): 1.5 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 35; ID (A): 18; RDS(on) (Ohms): 0.28; PD (W): 150; BVDSS (V): 500; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 27; ID (A): 13; RDS(on) (Ohms): 0.4; PD (W): 125; BVDSS (V): 500; Rq: 1; VSD (V): 1.4 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 35; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 125; BVDSS (V): 400; Rq: 1; VSD (V): 1.6 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 33; ID (A): 20; RDS(on) (Ohms): 0.21; PD (W): 150; BVDSS (V): 400; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-257; trr (nsec): 660; t(on) (nsec): 17; ID (A): 5; RDS(on) (Ohms): 1; PD (W): 50; BVDSS (V): 400; Rq: 2; VSD (V): 1.6 5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
|
| FDG6313N FDG6313NNL |
25V Dual N-Channel, Digital FET 500 mA, 25 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
From old datasheet system
|
Fairchild Semiconductor, Corp.
|
| 2SJ278MYTR-E 2SJ278 2SJ278MYTL-E |
1000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Silicon P Channel MOS FET
|
Renesas Electronics Corporation
|
| 2SK601 2SK0601 |
Silicon N-Channel MOS FET 500 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Panasonic, Corp.
Panasonic Semiconductor
|
| PMK27XP |
P-channel extremely low level FET 6500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| RQJ0303PGDQA RQJ0303PGDQATL-E |
3300 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Silicon P Channel MOS FET Power Switching
|
Renesas Electronics Corporation
|
| J174 J176 |
P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
FET, P Channel, 5 VThreshold
|
CENTRAL SEMICONDUCTOR CORP
|
| 2N409108 2N4093 |
N-CHANNEL J-FET
40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-206AA
|
Microsemi Corporation
MICROSEMI CORP-LAWRENCE
|
| BSH103_4 BSH103 BSH103/T3 |
850 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-channel TrenchMOS logic level FET N沟道TrenchMOS逻辑电平场效应管
From old datasheet system
|
NXP Semiconductors N.V.
|
|
