| PART |
Description |
Maker |
| SPR-EP20 |
SPR-EP20
|
Ferroxcube International Holding B.V.
|
| SPR-P30 |
SPR-P30/19
|
Ferroxcube International Holding B.V.
|
| SKY74073 |
Dual-Band SPR™ Module for GSM and GPRS Handset Applications
SKY74073: Dual-Band SPR?/a> Module for GSM and GPRS Handset Applications
SKY74073: Dual-Band SPR⑩ Module for GSM and GPRS Handset Applications
SKY74073: Dual-Band SPR Module for GSM and GPRS Handset Applications
|
Skyworks Solutions Inc.
|
| 53013-1 |
Ring and Spade Tongue Terminals; TERMINAL,BUDG SPR SPD 12-10 5 ( AMP )
|
Tyco Electronics
|
| SSM6G18NU |
Silicon P Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode
Multi-chip discrete device (P-ch SBD)
|
Toshiba Semiconductor
|
| TPCP8J01 |
TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) Silicon NPN Epitaxial Type
TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) /Silicon NPN Epitaxial Type
MOSFET TPC Series
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| V23135-W1001-A309 V23135-W1002-A309 |
Star Point Relay SPR High Current Devices High Current Solutions
|
Tyco Electronics
|
| D5050UK |
METAL GATE RF SILICON FET (GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 300W - 50V - 30MHz SINGLE ENDED)
|
TT electronics Semelab Limited
Seme LAB
|
| CMLM3405 |
MULTI DISCRETE MODULE?/a> SURFACE MOUNT HIGH CURRENT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE
MULTI DISCRETE MODULE⑩ SURFACE MOUNT HIGH CURRENT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE
MULTI DISCRETE MODULE??SURFACE MOUNT HIGH CURRENT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE
|
CENTRAL[Central Semiconductor Corp]
|
