| PART |
Description |
Maker |
| HMC496LP3 HMC496LP3E |
SiGe WIDEBAND DIRECT MODULATOR RFIC, 4.0 - 7.0 GHz
|
Hittite Microwave Corporation
|
| THM2004J |
SiGe HBT MMIC Wideband Linear Amplifier
|
TACHYONICS[Tachyonics CO,. LTD]
|
| THM2004J |
SiGe HBT MMIC Wideband Linear Amplifier
|
ETC
|
| NBSG14 |
2.5V/3.3VSiGe Differential 1:4 Clock/Data Driver with RSECL* Outputs(B>RSECL输出.5V/3.3VSiGe，差:4时钟/数据驱动
|
ON Semiconductor
|
| MAX2642 MAX2642EXT-T MAX2642-MAX2643 MAX2643 MAX26 |
900MHz SiGe, High-Variable IP3, Low-Noise Amplifier
From old datasheet system
900MHz SiGe, High IP3, Low-Noise Amplifiers
900MHz SiGe / High IP3 / Low-Noise Amplifiers
Hex inverters 14-SOIC 0 to 70
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maixm
Maxim Integrated Products, Inc.
|
| AD9831 AD9831ASTZ-REEL AD9831-15 |
DIRECT DIGITAL SYNTGESIZER WAVEFORM GENERATOR
DIRECT DIGITAL SYNTHESIZER
|
Analog Devices
|
| K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.
K4R271669B:Direct RDRAMData Sheet
256K x 16/18 bit x 32s banks Direct RDRAMTM
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MAX9995 MAX9995ETX-T MAX9995ETX MAX9995ETX-TD MAX9 |
Dual / SiGe / High-Linearity / 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch
From old datasheet system
Dual SiGe High-Linearity 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch
Hex 2-Input NOR Drivers 20-CDIP -55 to 125
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch 双通道，锗，高线性度700MHz2200MHz下变频混频器，LO缓冲开
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
|
| MC-4R512FKK8K MC-4R512FKK8K-840 |
512MB 32-bit Direct Rambus DRAM RIMM Module 256M X 18 DIRECT RAMBUS DRAM MODULE, DMA232
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| HS-2600RH 5962D9567101VPC HS7B-2600RH-Q HS7-2600RH |
Radiation Hardened Wideband/ High Impedance Operational Amplifier
Radiation Hardened Wideband, High
Impedance Operational Amplifier(抗辐射宽带、高阻抗运算放大
CONNECTOR ACCESSORY
Radiation Hardened Wideband, High Impedance Operational Amplifier OP-AMP, 12 MHz BAND WIDTH, CDIP8
Radiation Hardened Wideband, High Impedance Operational Amplifier OP-AMP, 6000 uV OFFSET-MAX, CDIP8
|
Intersil Corporation
Intersil, Corp.
http://
|
