PART |
Description |
Maker |
SKB15N60HS |
High Speed IGBT in NPT-technology
|
INFINEON[Infineon Technologies AG]
|
SGP20N60HS SGW20N60HS |
High Speed IGBT in NPT-technology
|
INFINEON[Infineon Technologies AG]
|
APT50GS60BR APT50GS60SR APT50GS60SRG |
Thunderbolt High Speed NPT IGBT
|
Microsemi Corporation
|
APT50GS60BRDQ2 APT50GS60BRDQ2G APT50GS60SRDQ2 APT5 |
Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode
|
Microsemi Corporation
|
SKB15N60HS07 |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
SKW30N60 |
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技术中的快S-IGBT) 快速的S - IGBT的不扩散核武器条约与软,恢复快反平行快恢复二极管(不扩散技术中的快速第S - IGBT技术)
|
SIEMENS AG
|
Q67040-S4274 Q67040-S4276 Q67040-S4275 SGW15N120 S |
Fast S-IGBT in NPT-Technology Fast IGBT in NPT-technology 在不扩散核武器条约快速IGBT技 IGBTs & DuoPacks - 15A 1200V TO220AB IGBT
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
APT50GT60BR APT50GT60SRG APT50GT60BRG |
Thunderbolt IGBT Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 52; 110 A, 600 V, N-CHANNEL IGBT, TO-247AD
|
Microsemi Corporation http:// Microsemi, Corp.
|
APT100GT120JR |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 60; 123 A, 1200 V, N-CHANNEL IGBT Thunderbolt IGBT
|
Microsemi, Corp. Microsemi Corporation
|
SGW25N120 |
IGBTs & DuoPacks - 25A 1200V TO247AC IGBT Fast IGBT in NPT-technology TRANSISTOR,IGBT,N-CHAN,1.2KV V(BR)CES,49A I(C),TO-247AC
|
INFINEON[Infineon Technologies AG]
|