| PART |
Description |
Maker |
| MB8266A |
MOS 65536 Bit DRAM
|
Fujitsu Microelectronics
|
| MB81416 |
NMOS 65536 Bit DRAM
|
Fujitsu Microelectronics
|
| MB8264A MB8264A-15 MB8264A-10 MB8264A-12 |
MOS 65536-bit Dynamic Random Access Memory
|
Fujitsu Microelectronics
Fujitsu Media Devices Limited
Fujitsu Component Limited.
|
| LC382161T-17 |
2 MEG(65536 words x 16 bits x 2 banks) Synchronous DRAM
|
Sanyo Semicon Device
|
| LC32464M-80 LC32464P |
256K (65536 words X 4 bits) DRAM Fast Page Mode
|
Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
|
| LC321667BJ LC321667BM LC321667BT-70 LC321667BT-80 |
1 MEG (65536 words X 16 bits) DRAM EDO Page Mode / Byte Write
1 MEG (65536 words X 16 bits) DRAM EDO Page Mode, Byte Write???
|
Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
|
| M5M51016BRT-10VL-I M5M51016BRT-10VLL-I M5M51016BTP |
From old datasheet system
1048576-BIT CMOS STATICRAM
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
1048576-bit (65536-word by 16-bit) CMOS static RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| GM71V65163C |
(GM71VS65163CL / GM71V65163C) 4M x 16-Bit MOS DRAM
|
Hynix Semiconductor
|
| UPD27C512 |
65536 x 8-Bit CMOS UV EPROM
|
NEC Electronics
|
| UPD27C1024A |
65536 x 16-Bit CMOS UV EPROM
|
NEC Electronics
|
| CXK5B16120J/TM-12 |
65536-word x 16-bit High Speed Bi-CMOS Static RAM 65536字16位高速双CMOS静态RAM
65536-word x 16-bit High Speed Bi-CMOS Static RAM
|
Johnson Electric Group
SONY
|
| HYB314405BJL-70 HYB314405BJL-60 HYB314405BJL-50 HY |
1M x 4 Bit EDO DRAM 3.3 V 50 ns
1M x 4 Bit EDO DRAM 3.3 V 60 ns
-1M x 4-Bit Dynamic RAM
1M x 4 Bit EDO DRAM 3.3 V 70 ns
1M x 4-Bit Dynamic RAM (Hyper Page Mode (EDO) version)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
