| PART |
Description |
Maker |
| KVR266X64SC25/128 |
128MB 266MHz DDR Non-ECC CL2.5 SODIMM 128MB66MHz的复员非ECC CL2.5的SODIMM
|
Electronic Theatre Controls, Inc.
|
| KVR533D2E4K2/1G |
1024MB 533MHz DDR2 ECC CL4 DIMM (Kit of 2) 1024MB33 ECC DDR2记忆CL4内存（包2
|
Vishay Intertechnology, Inc.
|
| SDU12864H1B62MT-50R |
1024MB DDR . SDRAM DIMM
|
List of Unclassifed Man...
|
| SDU01G64H3BF2MT-50R SDU01G64H3BF2MT-60R |
1024MB DDR ?unbuffered DDR1 UDIMM
|
List of Unclassifed Manufacturers
List of Unclassifed Man...
|
| SDU01G64H3BJ2SA-60R SDU01G64H3BJ2SA-50R |
1024MB DDR . unbuffered DDR1 UDIMM
|
List of Unclassifed Manufacturers
List of Unclassifed Man...
|
| M470L6423CK0 |
512MB DDR SDRAM MODULE (64Mx64 based on DDP 64Mx 8 DDR SDRAM) 200pin SODIMM 64bit Non-ECC/Parity
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| W3EG7266S202AD4 W3EG7266S335AD4I W3EG7266S335BD4I |
512MB - 64Mx72 DDR SDRAM UNBUFFERED ECC w/PLL
|
White Electronic Designs Corporation
White Electronic Design...
|
| W3EG72128S-AD4 W3EG72128SXXXD4ISG W3EG72128S202AD4 |
1GB - 2x64Mx72 DDR SDRAM UNBUFFERED ECC w/PLL
|
WEDC[White Electronic Designs Corporation]
|
| W3EG7266S403BD4I W3EG7266S202AD4I W3EG7266S202BD4I |
512MB - 64Mx72 DDR SDRAM UNBUFFERED ECC w/PLL
|
WEDC[White Electronic Designs Corporation]
|
| W3EG7264S335BD4 W3EG7264S202AD4 W3EG7264S202BD4 W3 |
512MB - 2x32Mx72 DDR ECC SDRAM UNBUFFERED w/PLL
|
WEDC[White Electronic Designs Corporation]
|
| W3EG264M72AFSR335D3XG W3EG264M72AFSR263D3XG W3EG26 |
1GB - 2x64Mx72 DDR SDRAM REGISTERED ECC w/PLL, FBGA
|
WEDC[White Electronic Designs Corporation]
|
| M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC |
64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL
Single-Supply Voltage Translator 6-SOT-23 -40 to 85
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
