| PART |
Description |
Maker |
| NIS6111QPT1 NIS6111 |
Better efficiency rectifier system. Ultra efficient, high speed diode.
|
ONSEMI[ON Semiconductor]
|
| HER1001G10 |
10.0 AMPS. Glass Passivated High Efficient Rectifiers
10 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB
|
Taiwan Semiconductor Company, Ltd
|
| NIS611105 NIS6111QPT1G NIS6111 NIS6111QPT1 |
BERS IC (Better Efficiency Rectifier System) Ultra Efficient, High Speed Diode(BERS IC，高效，高速二极管)
|
ONSEMI[ON Semiconductor]
|
| SW08CXC300 SW12CXC300 SW58CXC620 SW42CXC680 SW30CX |
650 A, 800 V, SILICON, RECTIFIER DIODE
650 A, 1200 V, SILICON, RECTIFIER DIODE
1520 A, 5800 V, SILICON, RECTIFIER DIODE
1610 A, 4200 V, SILICON, RECTIFIER DIODE
5100 A, 3000 V, SILICON, RECTIFIER DIODE
5100 A, 3200 V, SILICON, RECTIFIER DIODE
1030 A, 3600 V, SILICON, RECTIFIER DIODE
2050 A, 2800 V, SILICON, RECTIFIER DIODE
1860 A, 4000 V, SILICON, RECTIFIER DIODE
|
WESTCODE SEMICONDUCTORS LTD
|
| TBYV26C |
Rectifier: High Efficient
|
Taiwan Semiconductor
|
| HERA1607G HERA1601G |
Rectifier: High Efficient
|
Taiwan Semiconductor
|
| HS1M HS1B |
High Efficient Rectifier
|
Yangzhou yangjie electronic co., ltd
|
| EGC20MH EGC20GH EGC20KH EGC20DH EGC20JH |
High Efficient Rectifier
|
Zowie Technology Corporation
|
| HER1601G |
Rectifier: High Efficient
|
Taiwan Semiconductor
|
| HS5K HS5F HS5A HS5B HS5D |
Rectifier: High Efficient
|
Taiwan Semiconductor
|
| HER308 HER305 HER301 HER302 HER303 HER304 HER306 H |
HIGH EFFICIENT RECTIFIER DIODES
|
Electronics Industry Public Company Limited
EIC[EIC discrete Semiconductors]
|
