| PART |
Description |
Maker |
| 2SJ338Y 2SJ338O |
TRANSISTOR | MOSFET | P-CHANNEL | 180V V(BR)DSS | 1A I(D) | TO-251AA
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管| MOSFET的| P通道| 180V五（巴西）直| 1A条（丁）|51AA
|
NEC, Corp.
|
| 612 614F 612L 612F 612NGH 612NGL 612NGN 612NGM |
Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay
Low-Power, Single/Dual-Level Battery Monitors with Hysteresis
LUEFTER DC SLIMLINE 60 LOWNOISE 12V
5V Adjustable, 10W, CMOS, Step-Up, Switching Regulator Controller LUEFTER直流12V的超0低噪
|
Jameco Electronics
|
| 2SD2161 2SD2161L |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
|
NEC Corp.
NEC[NEC]
|
| 3089-6318-00 3089-6317-00 3089-6817-00 3089-6819-0 |
Power Dividers2346 and 8-Way 800-900890-960or 1700-1900 MHz
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 功分2400-90090-960，或1700900年兆
1700 MHz - 1900 MHz RF/MICROWAVE SPLITTER, 0.5 dB INSERTION LOSS
|
Samtec, Inc.
|
| 2SK2142 2SK1884 2SK1893 2SJ269 2SK1892 2SK1885 2SK |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 22A I(D) | TO-220AB
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-220AB
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | SOT-186
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管| MOSFET的| N沟道| 400V五（巴西）直| 9A条（丁）|20CI
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 16A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 400V五（巴西）直| 16A条（丁）| TO - 220AB现有
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管| MOSFET的| N沟道| 400V五（巴西）直| 5.5AI（四）| TO - 220AB现有
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管| MOSFET的| N沟道| 400V五（巴西）直| 7A条（丁）| TO - 220AB现有
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管| MOSFET的| P通道| 60V的五（巴西）直| 8A条（丁）| TO - 220AB现有
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 10A I(D) | TO-220AB
|
Molex, Inc.
Sanyo Electric Co., Ltd.
|
| 2SD1511Q |
Low-Power, Single/Dual-Level Battery Monitors with Hysteresis 晶体
|
Panasonic, Corp.
|
| 2SD1585 2SD1584L-Z 2SD1584M-Z 2SD1584K-Z |
Low-Power, Single/Dual-Level Battery Monitors with Hysteresis
NPN SILICON POWER TRANSISTOR
|
NEC[NEC]
|
| 2SK2218 2SK2218-5 |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
High-Frequency Low-Noise Amp Applications
|
Sanyo Semicon Device
|
| 2SK0657 2SK657 2SK06572SK657 |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
M-A1
Small-signal device - Small-signal FETs - MOS FETs
|
panasonic
|
| 2SK3037 2SK3037TENTATIVE |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
Silicon N-Channel Power F-MOS FET
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| MAX6439UTEHRD3 MAX6440UTEHRD3 |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
|
MAXIM - Dallas Semiconductor
|
